isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

PolarHV HiPerFET Power MOSFET

文件：208.92 Kbytes Page：4 Pages

16 Amps, 500 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 16N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalan

500V, 16A N-Channel MOSFET

General Description The AOT16N50 & AOTF16N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capabili

16A 500V N-channel enhanced field effect transistor

文件：900.91 Kbytes Page：6 Pages

16A竊?00V N-CHANNEL MOSFET

文件：329.21 Kbytes Page：6 Pages

isc N-Channel MOSFET Transistor

文件：305.65 Kbytes Page：2 Pages