位置：首页 > IC中文资料 > IXBT12N300HV
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXBT12N300HV | High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor Features ● High Voltage Package ● High Blocking Voltage ● Anti-Parallel Diode ● Low Conduction Losses Advantages ● Low Gate Drive Requirement ● High Power Density Applications: ● Switch-Mode and Resonant-Mode Power Supplies ● Uninterruptible Power Supplies (UPS) ● Laser Generators ● Ca | IXYS 艾赛斯 |   | |
IXBT12N300HV | 封装/外壳：TO-268-3，D³Pak（2 引线 + 接片），TO-268AA 包装：管件 描述：IGBT 3000V 30A 160W TO268 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | IXYS 艾赛斯 | | |
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor Features ● High Blocking Voltage ● International Standard Packages ● Anti-Parallel Diode ● Low Conduction Losses Advantages ● Low Gate Drive Requirement ● High Power Density Applications: ● Switched-Mode and Resonant-Mode Power Supplies ● Uninterruptible Power Supplies (UPS) ● Laser Gen | IXYS 艾赛斯 | | ||
High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor Features ● High Voltage Package ● High Blocking Voltage ● Anti-Parallel Diode ● Low Conduction Losses Advantages ● Low Gate Drive Requirement ● High Power Density Applications: ● Switch-Mode and Resonant-Mode Power Supplies ● Uninterruptible Power Supplies (UPS) ● Laser Generators ● Ca | IXYS 艾赛斯 | | ||
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Features ● High Blocking Voltage ● International Standard Packages ● Anti-Parallel Diode ● Low Conduction Losses Advantages ● Low Gate Drive Requirement ● High Power Density Applications: ● Switched-Mode and Resonant-Mode Power Supplies ● Uninterruptible Power Supplies (UPS) ● Laser Gen | IXYS 艾赛斯 | | ||
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor Features ● High Blocking Voltage ● International Standard Packages ● Anti-Parallel Diode ● Low Conduction Losses Advantages ● Low Gate Drive Requirement ● High Power Density Applications: ● Switched-Mode and Resonant-Mode Power Supplies ● Uninterruptible Power Supplies (UPS) ● Laser Gen | IXYS 艾赛斯 | | ||
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor 文件：207.3 Kbytes Page：5 Pages | IXYS 艾赛斯 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
N/A |
58000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
IXYS |
23+ |
TO-268 |
7000 |
||||
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
IXYS |
22+ |
TO268 |
9000 |
原厂渠道,现货配单 |
|||
IXYS |
24+ |
TO-268 |
8866 |
||||
IXYS |
23+ |
TO-268 |
8000 |
只做原装现货 |
|||
IXYS/Littelfuse |
25+ |
TO-268 |
15800 |
全新原装正品现货直销 |
|||
IXYS/艾赛斯 |
21+ |
TO-268 |
10000 |
原装现货假一罚十 |
|||
Littelfuse/IXYS |
23+ |
TO-268HV |
450 |
三极管/MOS管/晶体管 > IGBT管/模块 |
|||
IXYS |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
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IXBT12N300HV规格书下载地址
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DdatasheetPDF页码索引
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