位置:首页 > IC中文资料第2533页 > IXBT12N300
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
IXBT12N300 | HighVoltage,HighGainBIMOSFETMonolithicBipolarMOSTransistor Features ●HighBlockingVoltage ●InternationalStandardPackages ●Anti-ParallelDiode ●LowConductionLosses Advantages ●LowGateDriveRequirement ●HighPowerDensity Applications: ●Switched-ModeandResonant-ModePowerSupplies ●UninterruptiblePowerSupplies(UPS) ●LaserGen | IXYS IXYS Integrated Circuits Division | ||
IXBT12N300 | 封装/外壳:TO-268-3,D³Pak(2 引线 + 接片),TO-268AA 包装:托盘 描述:IGBT 3000V 30A 160W TO268 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | IXYS IXYS Integrated Circuits Division | ||
HighVoltage,HighGainBiMOSFETTMMonolithicBipolarMOSTransistor Features ●HighVoltagePackage ●HighBlockingVoltage ●Anti-ParallelDiode ●LowConductionLosses Advantages ●LowGateDriveRequirement ●HighPowerDensityApplications: ●Switch-ModeandResonant-Mode PowerSupplies ●UninterruptiblePowerSupplies(UPS) ●LaserGenerators ●Ca | IXYS IXYS Integrated Circuits Division | |||
封装/外壳:TO-268-3,D³Pak(2 引线 + 接片),TO-268AA 包装:管件 描述:IGBT 3000V 30A 160W TO268 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | IXYS IXYS Integrated Circuits Division | |||
HighVoltage,HighGainBiMOSFETTMMonolithicBipolarMOSTransistor Features ●HighVoltagePackage ●HighBlockingVoltage ●Anti-ParallelDiode ●LowConductionLosses Advantages ●LowGateDriveRequirement ●HighPowerDensityApplications: ●Switch-ModeandResonant-Mode PowerSupplies ●UninterruptiblePowerSupplies(UPS) ●LaserGenerators ●Ca | IXYS IXYS Integrated Circuits Division | |||
HighVoltage,HighGainBIMOSFETTMMonolithicBipolarMOSTransistor Features ●HighBlockingVoltage ●InternationalStandardPackages ●Anti-ParallelDiode ●LowConductionLosses Advantages ●LowGateDriveRequirement ●HighPowerDensity Applications: ●Switched-ModeandResonant-ModePowerSupplies ●UninterruptiblePowerSupplies(UPS) ●LaserGen | IXYS IXYS Integrated Circuits Division | |||
HighVoltage,HighGainBIMOSFETMonolithicBipolarMOSTransistor Features ●HighBlockingVoltage ●InternationalStandardPackages ●Anti-ParallelDiode ●LowConductionLosses Advantages ●LowGateDriveRequirement ●HighPowerDensity Applications: ●Switched-ModeandResonant-ModePowerSupplies ●UninterruptiblePowerSupplies(UPS) ●LaserGen | IXYS IXYS Integrated Circuits Division | |||
HighVoltage,HighGainBIMOSFETMonolithicBipolarMOSTransistor 文件:207.3 Kbytes Page:5 Pages | IXYS IXYS Integrated Circuits Division |
IXBT12N300产品属性
- 类型
描述
- 型号
IXBT12N300
- 功能描述
IGBT 3000V 30A 160W TO268
- RoHS
是
- 类别
分离式半导体产品 >> IGBT - 单路
- 系列
BIMOSFET™
- 标准包装
30
- 系列
GenX3™ IGBT
- 类型
PT 电压 -
- 集电极发射极击穿(最大)
1200V Vge,
- Ic时的最大Vce(开)
3V @ 15V,100A 电流 -
- 集电极(Ic)(最大)
200A 功率 -
- 最大
830W
- 输入类型
标准
- 安装类型
通孔
- 封装/外壳
TO-247-3
- 供应商设备封装
PLUS247?-3
- 包装
管件
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IXYS |
23+ |
TO-268-3,D3Pak(2 引线 + 接片 |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
23+ |
N/A |
49500 |
正品授权货源可靠 |
||||
IXYS/艾赛斯 |
21+ROHS |
TO268 |
32365 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IXYS |
23+ |
N/A |
500 |
全新原装亏本出13157115792 |
|||
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
IXYS |
23+ |
TO-268 |
8000 |
只做原装现货 |
|||
IXYS/艾赛斯 |
23+ |
TO-268 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
IXYS |
21+ |
TO-252AA |
21000 |
专业分立半导体,原装渠道正品现货 |
|||
IXYS |
19+ |
TO-268 |
56800 |
只卖原装正品!价格超越代理!可开增值税发票! |
|||
IXYS |
22+ |
TO268 |
9000 |
原厂渠道,现货配单 |
IXBT12N300规格书下载地址
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DdatasheetPDF页码索引
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