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IS62WV51216价格

参考价格：￥28.6032

型号：IS62WV51216BLL-55BLI 品牌：ISSI 备注：这里有IS62WV51216多少钱，2025年最近7天走势，今日出价，今日竞价，IS62WV51216批发/采购报价，IS62WV51216行情走势销售排行榜，IS62WV51216报价。

型号	功能描述	生产厂家企业	LOGO
IS62WV51216ALL	512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p	ISSI 矽成半导体	ISSI
IS62WV51216ALL-70BI	512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p	ISSI 矽成半导体	ISSI
IS62WV51216ALL-70TI	512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p	ISSI 矽成半导体	ISSI
IS62WV51216ALL-70XI	512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p	ISSI 矽成半导体	ISSI
IS62WV51216BLL	512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p	ISSI 矽成半导体	ISSI
IS62WV51216BLL-45B	512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p	ISSI 矽成半导体	ISSI
IS62WV51216BLL-55BI	512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p	ISSI 矽成半导体	ISSI
IS62WV51216BLL-55BLI	512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p	ISSI 矽成半导体	ISSI
IS62WV51216BLL-55TI	512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p	ISSI 矽成半导体	ISSI
IS62WV51216BLL-55TLI	512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p	ISSI 矽成半导体	ISSI
IS62WV51216BLL-70XI	512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p	ISSI 矽成半导体	ISSI
IS62WV51216EALL	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL)  Data control for upper and lower bytes  Automotive tempera	ISSI 矽成半导体	ISSI
IS62WV51216EALL_V01	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL)  Data control for upper and lower bytes  Automotive tempera	ISSI 矽成半导体	ISSI
IS62WV51216EALL-55BI	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL)  Data control for upper and lower bytes  Automotive tempera	ISSI 矽成半导体	ISSI
IS62WV51216EALL-55BLI	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL)  Data control for upper and lower bytes  Automotive tempera	ISSI 矽成半导体	ISSI
IS62WV51216EALL-55TI	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL)  Data control for upper and lower bytes  Automotive tempera	ISSI 矽成半导体	ISSI
IS62WV51216EALL-55TLI	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL)  Data control for upper and lower bytes  Automotive tempera	ISSI 矽成半导体	ISSI
IS62WV51216EBLL	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL)  Data control for upper and lower bytes  Automotive tempera	ISSI 矽成半导体	ISSI
IS62WV51216EBLL-45BI	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL)  Data control for upper and lower bytes  Automotive tempera	ISSI 矽成半导体	ISSI
IS62WV51216EBLL-45BLI	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL)  Data control for upper and lower bytes  Automotive tempera	ISSI 矽成半导体	ISSI
IS62WV51216EBLL-45T2LI	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL)  Data control for upper and lower bytes  Automotive tempera	ISSI 矽成半导体	ISSI
IS62WV51216EBLL-45TI	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL)  Data control for upper and lower bytes  Automotive tempera	ISSI 矽成半导体	ISSI
IS62WV51216EBLL-45TLI	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL)  Data control for upper and lower bytes  Automotive tempera	ISSI 矽成半导体	ISSI
IS62WV51216EBLL-55BI	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL)  Data control for upper and lower bytes  Automotive tempera	ISSI 矽成半导体	ISSI
IS62WV51216EBLL-55BLI	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL)  Data control for upper and lower bytes  Automotive tempera	ISSI 矽成半导体	ISSI
IS62WV51216EBLL-55TI	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL)  Data control for upper and lower bytes  Automotive tempera	ISSI 矽成半导体	ISSI
IS62WV51216EBLL-55TLI	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL)  Data control for upper and lower bytes  Automotive tempera	ISSI 矽成半导体	ISSI
IS62WV51216EFALL	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL)  Optional ERR	ISSI 矽成半导体	ISSI
IS62WV51216EFALL-55B2I	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL)  Optional ERR	ISSI 矽成半导体	ISSI
IS62WV51216EFALL-55B2LI	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL)  Optional ERR	ISSI 矽成半导体	ISSI
IS62WV51216EFALL-55B3I	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL)  Optional ERR	ISSI 矽成半导体	ISSI
IS62WV51216EFALL-55B3LI	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL)  Optional ERR	ISSI 矽成半导体	ISSI
IS62WV51216EFALL-55BI	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL)  Optional ERR	ISSI 矽成半导体	ISSI
IS62WV51216EFALL-55BLI	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL)  Optional ERR	ISSI 矽成半导体	ISSI
IS62WV51216EFALL-55TLI	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL)  Optional ERR	ISSI 矽成半导体	ISSI
IS62WV51216EFBLL	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL)  Optional ERR	ISSI 矽成半导体	ISSI
IS62WV51216EFBLL-45B2I	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL)  Optional ERR	ISSI 矽成半导体	ISSI
IS62WV51216EFBLL-45B2LI	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL)  Optional ERR	ISSI 矽成半导体	ISSI
IS62WV51216EFBLL-45B3I	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL)  Optional ERR	ISSI 矽成半导体	ISSI
IS62WV51216EFBLL-45B3LI	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL)  Optional ERR	ISSI 矽成半导体	ISSI
IS62WV51216EFBLL-45BI	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL)  Optional ERR	ISSI 矽成半导体	ISSI
IS62WV51216EFBLL-45BLI	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL)  Optional ERR	ISSI 矽成半导体	ISSI
IS62WV51216EFBLL-45TLI	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL)  Optional ERR	ISSI 矽成半导体	ISSI
IS62WV51216EFBLL-55B2I	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL)  Optional ERR	ISSI 矽成半导体	ISSI
IS62WV51216EFBLL-55B2LI	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL)  Optional ERR	ISSI 矽成半导体	ISSI
IS62WV51216EFBLL-55B3I	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL)  Optional ERR	ISSI 矽成半导体	ISSI
IS62WV51216EFBLL-55B3LI	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL)  Optional ERR	ISSI 矽成半导体	ISSI
IS62WV51216EFBLL-55BI	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL)  Optional ERR	ISSI 矽成半导体	ISSI
IS62WV51216EFBLL-55BLI	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL)  Optional ERR	ISSI 矽成半导体	ISSI
IS62WV51216EFBLL-55TLI	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL)  Optional ERR	ISSI 矽成半导体	ISSI
IS62WV51216GALL	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.) • TTL compatible interface levels • Single power supply –1.65V-2.2V VDD (IS62/65WV51216GALL) – 2.2V-3.6V VDD (IS62/65WV51216GBLL) • Three state ou	ISSI 矽成半导体	ISSI
IS62WV51216GALL-55TLI	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.) • TTL compatible interface levels • Single power supply –1.65V-2.2V VDD (IS62/65WV51216GALL) – 2.2V-3.6V VDD (IS62/65WV51216GBLL) • Three state ou	ISSI 矽成半导体	ISSI
IS62WV51216GBLL	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.) • TTL compatible interface levels • Single power supply –1.65V-2.2V VDD (IS62/65WV51216GALL) – 2.2V-3.6V VDD (IS62/65WV51216GBLL) • Three state ou	ISSI 矽成半导体	ISSI
IS62WV51216GBLL-45TLI	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.) • TTL compatible interface levels • Single power supply –1.65V-2.2V VDD (IS62/65WV51216GALL) – 2.2V-3.6V VDD (IS62/65WV51216GBLL) • Three state ou	ISSI 矽成半导体	ISSI
IS62WV51216HALL	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 25 mA (max.) – CMOS Standby Current: 3.2 uA (typ., 25°C)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216HALL) – 2.2V-3.6V VDD (IS62/65WV51216HBLL)  Three	ISSI 矽成半导体	ISSI
IS62WV51216HALL-55B	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 25 mA (max.) – CMOS Standby Current: 3.2 uA (typ., 25°C)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216HALL) – 2.2V-3.6V VDD (IS62/65WV51216HBLL)  Three	ISSI 矽成半导体	ISSI
IS62WV51216HALL-55B2	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 25 mA (max.) – CMOS Standby Current: 3.2 uA (typ., 25°C)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216HALL) – 2.2V-3.6V VDD (IS62/65WV51216HBLL)  Three	ISSI 矽成半导体	ISSI
IS62WV51216HALL-55B2I	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 25 mA (max.) – CMOS Standby Current: 3.2 uA (typ., 25°C)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216HALL) – 2.2V-3.6V VDD (IS62/65WV51216HBLL)  Three	ISSI 矽成半导体	ISSI
IS62WV51216HALL-55B2L	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 25 mA (max.) – CMOS Standby Current: 3.2 uA (typ., 25°C)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216HALL) – 2.2V-3.6V VDD (IS62/65WV51216HBLL)  Three	ISSI 矽成半导体	ISSI
IS62WV51216HALL-55B2LI	512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 25 mA (max.) – CMOS Standby Current: 3.2 uA (typ., 25°C)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216HALL) – 2.2V-3.6V VDD (IS62/65WV51216HBLL)  Three	ISSI 矽成半导体	ISSI

IS62WV51216产品属性

类型
描述
型号
IS62WV51216
制造商
ISSI
制造商全称
Integrated Silicon Solution, Inc
功能描述
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

IS62WV51216供应商更多...

更新时间：2025-12-10 9:22:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
千层芯半导体(深圳)有限公司	IS62WV51216BLL-55BI	ISSI	24+	SMD	15600	静态随机存取存储器8Mb512Kx1655nsAsync静态随机存取	询价
深圳市能元时代电子有限公司	IS62WV51216BLL-15TI	ISSI	23+		64990	##公司主营品牌长期供应100%原装现货可含税提供技术	询价
深圳市鼎欣微电子有限公司	IS62WV51216BLL-45TLI	ISSI	24+	TSOP	19000	只做正品原装现货	询价
瀚佳科技(深圳)有限公司	IS62WV51216BLL-55BI	ISSI, Integrated Silicon Solut	24+	48-迷你型BGA(6x8)	56200	一级代理/放心采购	询价
深圳市宏世佳电子科技有限公司	IS62WV51216BLL-55	ISSI	2025+	TSSOP	3768	全新原厂原装产品、公司现货销售	询价
深圳市木森蓝科技有限公司	IS62WV51216BLL	ISSI	24+		8600	正品原装,正规渠道,免费送样。支持账期,BOM一站式配齐	询价
天津市博通航睿技术有限公司	IS62WV51216BLL	ISSI	23+	TSOP-	7000		询价
深圳市诺美思科技有限公司	IS62WV51216BLL-55	ISSI		原厂封装	9800	原装进口公司现货假一赔百	询价
京海半导体(深圳)有限公司	IS62WV51216BLL-55BI	ISSI	21+	BGA	10000	原装现货假一罚十	询价
深圳市胜彬电子有限公司	IS62WV51216BLL-55BI	ISSI	22+	BGA	8000	原装正品支持实单	询价

IS62WV51216芯片相关品牌

IS62WV51216规格书下载地址

IS62WV51216参数引脚图相关

IS62WV51216数据表相关新闻

IS62WV51216BLL-55TL
IS62WV51216BLL-55TL
2022-7-1
IS62WV12816EBLL-45BLI
IS62WV12816EBLL-45BLI
2021-10-11
IS61SF12832-8.5TQ
产品属性属性值搜索类似制造商: ISSI 产品种类: 静态随机存取存储器存储容量: 4 Mbit 访问时间: 8.5 ns 最大时钟频率: 90 MHz 电源电压-最大: 3.63 V 电源电压-最小: 3.135 V 电源电流—最大值: 230 mA 最小工作温度: 0 C 最大工作温度: + 70 C 安装风格: SMD/SMT 封装 / 箱体: TQFP-100 数
2020-7-13
IS62WV5128ALL-70H，IS62WV2568ALL-70T，IS62WV5128BLL-55HLI，IS62WV5128BLL-55T2，IS62WV5128BLL-55T2I，IS62WV5128ALL-70TI，IS41C16100S-60TI，IS41C16128-40KI，IS41C16256-35T
IS62WV5128ALL-70H，IS62WV2568ALL-70T，IS62WV5128BLL-55HLI，IS62WV5128BLL-55T2，IS62WV5128BLL-55T2I，IS62WV5128ALL-70TI，IS41C16100S-60TI，IS41C16128-40KI，IS41C16256-35T
2020-1-1
IS62WV5128BLL-55HLI
IS62WV5128BLL-55HLI，全新原装当天发货或门市自取0755-82732291.
2019-3-18
IS62C256AL-45TLI进口原装假一赔十
瀚佳科技(深圳）有限公司：专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30

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IS62WV51216价格

IS62WV51216产品属性

IS62WV51216供应商更多...

IS62WV51216芯片相关品牌

IS62WV51216规格书下载地址

IS62WV51216参数引脚图相关

IS62WV51216数据表相关新闻

IS62WV51216BLL-55TL

IS62WV12816EBLL-45BLI

IS61SF12832-8.5TQ

IS62WV5128ALL-70H，IS62WV2568ALL-70T，IS62WV5128BLL-55HLI，IS62WV5128BLL-55T2，IS62WV5128BLL-55T2I，IS62WV5128ALL-70TI，IS41C16100S-60TI，IS41C16128-40KI，IS41C16256-35T

IS62WV5128BLL-55HLI

IS62C256AL-45TLI进口原装假一赔十

DdatasheetPDF页码索引