IS62WV51216价格

参考价格:¥28.6032

型号:IS62WV51216BLL-55BLI 品牌:ISSI 备注:这里有IS62WV51216多少钱,2025年最近7天走势,今日出价,今日竞价,IS62WV51216批发/采购报价,IS62WV51216行情走势销售排行榜,IS62WV51216报价。
型号 功能描述 生产厂家&企业 LOGO 操作

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p

ISSI

北京矽成

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p

ISSI

北京矽成

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p

ISSI

北京矽成

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p

ISSI

北京矽成

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p

ISSI

北京矽成

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p

ISSI

北京矽成

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p

ISSI

北京矽成

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p

ISSI

北京矽成

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p

ISSI

北京矽成

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p

ISSI

北京矽成

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p

ISSI

北京矽成

封装/外壳:48-TFBGA 包装:托盘 描述:IC SRAM 8MBIT PARALLEL 48MINIBGA 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:48-TFBGA 包装:托盘 描述:IC SRAM 8MBIT PARALLEL 48MINIBGA 集成电路(IC) 存储器

ETC

知名厂家

TTL compatible interface levels

文件:1.35008 Mbytes Page:18 Pages

ISSI

北京矽成

TTL compatible interface levels

文件:1.35008 Mbytes Page:18 Pages

ISSI

北京矽成

Very Low Power/Voltage CMOS SRAM

文件:280.7 Kbytes Page:9 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

IS62WV51216产品属性

  • 类型

    描述

  • 型号

    IS62WV51216

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

更新时间:2025-8-12 14:54:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
20+
BGA
2860
原厂原装正品价格优惠公司现货欢迎查询
ISSI
25+23+
BGA
38346
绝对原装正品全新进口深圳现货
ISSI Integrated Silicon Soluti
22+
48miniBGA (6x8)
9000
原厂渠道,现货配单
ISSI
23+
48-迷你型BGA(6x8)
1389
专业分销产品!原装正品!价格优势!
ISSI
24+
SMD
15600
静态随机存取存储器8Mb512Kx1655nsAsync静态随机存取
ISSI
22+
48-TFBGA
12245
现货,原厂原装假一罚十!
ISSI
25+
BGA
6500
独立分销商 公司只做原装 诚心经营 免费试样正品保证
ISSI
2016+
BGA
6523
只做进口原装现货!假一赔十!
ISSI
23+
48-TFBGA
6000
专业配单保证原装正品假一罚十
ISSI, Integrated Silicon Solut
21+
60-TFBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营

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