IS62WV51216EBLL价格

参考价格:¥39.8145

型号:IS62WV51216EBLL-45BLI 品牌:ISS 备注:这里有IS62WV51216EBLL多少钱,2026年最近7天走势,今日出价,今日竞价,IS62WV51216EBLL批发/采购报价,IS62WV51216EBLL行情走势销售排行榜,IS62WV51216EBLL报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IS62WV51216EBLL

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL)  Data control for upper and lower bytes  Automotive tempera

ISSI

矽成半导体

IS62WV51216EBLL

TTL compatible interface levels

文件:1.35008 Mbytes Page:18 Pages

ISSI

矽成半导体

IS62WV51216EBLL

PowerSaver™ Lower Power Asynchronous SRAM

ISSI

矽成半导体

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL)  Data control for upper and lower bytes  Automotive tempera

ISSI

矽成半导体

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL)  Data control for upper and lower bytes  Automotive tempera

ISSI

矽成半导体

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL)  Data control for upper and lower bytes  Automotive tempera

ISSI

矽成半导体

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL)  Data control for upper and lower bytes  Automotive tempera

ISSI

矽成半导体

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL)  Data control for upper and lower bytes  Automotive tempera

ISSI

矽成半导体

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL)  Data control for upper and lower bytes  Automotive tempera

ISSI

矽成半导体

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL)  Data control for upper and lower bytes  Automotive tempera

ISSI

矽成半导体

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL)  Data control for upper and lower bytes  Automotive tempera

ISSI

矽成半导体

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL)  Data control for upper and lower bytes  Automotive tempera

ISSI

矽成半导体

封装/外壳:48-VFBGA 包装:卷带(TR) 描述:IC SRAM 8MBIT PARALLEL 48VFBGA 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:44-TSOP(0.400",10.16mm 宽) 包装:托盘 描述:IC SRAM 8MBIT PARALLEL 44TSOP II 集成电路(IC) 存储器

ETC

知名厂家

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p

ISSI

矽成半导体

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p

ISSI

矽成半导体

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL)  Data control for upper and lower bytes  Automotive tempera

ISSI

矽成半导体

TTL compatible interface levels

文件:1.35008 Mbytes Page:18 Pages

ISSI

矽成半导体

更新时间:2026-1-28 21:39:00
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