512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.) • TTL compatible interface levels • Single power supply –1.65V-2.2V VDD (IS62/65WV51216GALL) – 2.2V-3.6V VDD (IS62/65WV51216GBLL) • Three state ou

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.) • TTL compatible interface levels • Single power supply –1.65V-2.2V VDD (IS62/65WV51216GALL) – 2.2V-3.6V VDD (IS62/65WV51216GBLL) • Three state ou

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low p

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL)  Data control for upper and lower bytes  Automotive tempera

TTL compatible interface levels

文件：1.35008 Mbytes Page：18 Pages

TTL compatible interface levels

文件：1.35008 Mbytes Page：18 Pages