512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL)  Data control for upper and lower bytes  Automotive tempera

封装/外壳：48-VFBGA 包装：托盘 描述：IC SRAM 8MBIT PARALLEL 48VFBGA 集成电路（IC） 存储器

封装/外壳：48-VFBGA 包装：卷带（TR） 描述：IC SRAM 8MBIT PARALLEL 48VFBGA 集成电路（IC） 存储器

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL)  Data control for upper and lower bytes  Automotive tempera

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL)  Data control for upper and lower bytes  Automotive tempera

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating  TTL compatible interface levels  Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL)  Data control for upper and lower bytes  Automotive tempera