位置：首页 > IC中文资料第5657页 > IS62WV2568BLL
IS62WV2568BLL价格
参考价格：￥15.9355
型号：IS62WV2568BLL-55BLI 品牌：ISSI 备注：这里有IS62WV2568BLL多少钱，2026年最近7天走势，今日出价，今日竞价，IS62WV2568BLL批发/采购报价，IS62WV2568BLL行情走势销售排行榜，IS62WV2568BLL报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IS62WV2568BLL | 256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62WV2568ALL / IS62WV2568BLL are highspeed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po | ISSI 矽成半导体 |   | |
IS62WV2568BLL | 256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vcc (62WV2568ALL) – 2.5V--3.6V Vcc (62WV2568BLL) • Fully static operation: no cloc | ISSI 矽成半导体 | | |
256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vcc (62WV2568ALL) – 2.5V--3.6V Vcc (62WV2568BLL) • Fully static operation: no cloc | ISSI 矽成半导体 | | ||
256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vcc (62WV2568ALL) – 2.5V--3.6V Vcc (62WV2568BLL) • Fully static operation: no cloc | ISSI 矽成半导体 | | ||
256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vcc (62WV2568ALL) – 2.5V--3.6V Vcc (62WV2568BLL) • Fully static operation: no cloc | ISSI 矽成半导体 | | ||
256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vcc (62WV2568ALL) – 2.5V--3.6V Vcc (62WV2568BLL) • Fully static operation: no cloc | ISSI 矽成半导体 | | ||
256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62WV2568ALL / IS62WV2568BLL are highspeed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po | ISSI 矽成半导体 | | ||
256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62WV2568ALL / IS62WV2568BLL are highspeed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po | ISSI 矽成半导体 | | ||
256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vcc (62WV2568ALL) – 2.5V--3.6V Vcc (62WV2568BLL) • Fully static operation: no cloc | ISSI 矽成半导体 | | ||
256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62WV2568ALL / IS62WV2568BLL are highspeed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po | ISSI 矽成半导体 | | ||
256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62WV2568ALL / IS62WV2568BLL are highspeed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po | ISSI 矽成半导体 | | ||
256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vcc (62WV2568ALL) – 2.5V--3.6V Vcc (62WV2568BLL) • Fully static operation: no cloc | ISSI 矽成半导体 | | ||
256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62WV2568ALL / IS62WV2568BLL are highspeed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po | ISSI 矽成半导体 | | ||
256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62WV2568ALL / IS62WV2568BLL are highspeed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po | ISSI 矽成半导体 | | ||
256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vcc (62WV2568ALL) – 2.5V--3.6V Vcc (62WV2568BLL) • Fully static operation: no cloc | ISSI 矽成半导体 | | ||
256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62WV2568ALL / IS62WV2568BLL are highspeed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po | ISSI 矽成半导体 | | ||
256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vcc (62WV2568ALL) – 2.5V--3.6V Vcc (62WV2568BLL) • Fully static operation: no cloc | ISSI 矽成半导体 | | ||
256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vcc (62WV2568ALL) – 2.5V--3.6V Vcc (62WV2568BLL) • Fully static operation: no cloc | ISSI 矽成半导体 | | ||
256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62WV2568ALL / IS62WV2568BLL are highspeed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po | ISSI 矽成半导体 | | ||
256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62WV2568ALL / IS62WV2568BLL are highspeed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po | ISSI 矽成半导体 | | ||
256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62WV2568ALL / IS62WV2568BLL are highspeed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po | ISSI 矽成半导体 | | ||
256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62WV2568ALL / IS62WV2568BLL are highspeed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po | ISSI 矽成半导体 | | ||
256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62WV2568ALL / IS62WV2568BLL are highspeed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po | ISSI 矽成半导体 | | ||
封装/外壳：36-TFBGA 包装：卷带（TR） 描述：IC SRAM 2MBIT PARALLEL 36TFBGA 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
封装/外壳：32-TFSOP（0.465"，11.80mm 宽） 包装：管件 描述：IC SRAM 2MBIT PARALLEL 32STSOP I 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION The ISSI IS62WV2568ALL / IS62WV2568BLL are highspeed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po | ISSI 矽成半导体 | | ||
256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vcc (62WV2568ALL) – 2.5V--3.6V Vcc (62WV2568BLL) • Fully static operation: no cloc | ISSI 矽成半导体 | | ||
TTL compatible interface levels 文件：468.53 Kbytes Page：14 Pages | ISSI 矽成半导体 | |
IS62WV2568BLL产品属性
- 类型
描述
- 型号
IS62WV2568BLL
- 制造商
ISSI
- 制造商全称
Integrated Silicon Solution, Inc
- 功能描述
256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI |
2430+ |
TSSOP32 |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ISSI |
1041+ |
TSOP |
876 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ISSI |
24+ |
TSOP |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
ISSI |
24+ |
32-TFSOP |
30000 |
原厂原装,价格优势,欢迎洽谈! |
|||
ISSI |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ISSI |
24+ |
STSOP-32 |
6800 |
100%原装进口现货,欢迎来电咨询 |
|||
ISSI |
25+ |
TSOP32 |
30000 |
房间原装现货特价热卖,有单详谈 |
|||
ISSI |
25+ |
15000 |
原厂原装,价格优势 |
||||
ISSI |
26+ |
原厂封装 |
9526 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
ISSI |
24+ |
TSOP32 |
9860 |
一级代理/全新现货/长期供应! |
IS62WV2568BLL规格书下载地址
IS62WV2568BLL参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IS80C32
- IS80C31
- IS733H
- IS733
- IS725X
- IS725
- IS70-48
- IS70-24
- IS70-15
- IS70-12
- IS7000
- IS-70
- IS662X
- IS662
- IS661X
- IS661
- IS660X
- IS660
- IS655A
- IS654A
- IS63LV1024L-10JLI
- IS62WV6416DBLL-45TLI
- IS62WV6416BLL-55TLI
- IS62WV6416BLL-55BLI
- IS62WV6416BLL-45BI
- IS62WV5128DBLL-45T2LI
- IS62WV5128DBLL-45HLI
- IS62WV5128BLL-55TLI
- IS62WV5128BLL-55T2LI
- IS62WV5128BLL-55QLI
- IS62WV5128BLL-55HLI
- IS62WV51216EBLL-45TLI
- IS62WV51216EBLL-45BLI
- IS62WV51216EALL-55TLI
- IS62WV51216BLL-55TLI-TR
- IS62WV51216BLL-55TLI
- IS62WV51216BLL-55BLI
- IS62WV2568BLL-55TLI
- IS62WV2568BLL-55HLI
- IS62WV2568BLL-55BLI
- IS62WV25616DBLL-45TLI
- IS62WV25616BLL-55TLI-TR
- IS62WV25616BLL-55TLI
- IS62WV25616BLL-55BLI
- IS62WV20488EBLL-55BLI
- IS62WV20488EBLL-45BLI
- IS62WV1288DBLL-45TLI
- IS62WV1288DBLL-45QLI
- IS62WV1288DBLL-45HLI
- IS62WV1288BLL-55TLI
- IS62WV1288BLL-55QLI
- IS62WV1288BLL-55HLI
- IS62WV12816DBLL-45TLI
- IS62WV12816BLL-55TLI-TR
- IS62WV12816BLL-55TLI
- IS62WV12816BLL-55BLI
- IS62WV12816BLL-55B2LI
- IS62WV10248EBLL-45TLI
- IS62WV10248DBLL-55TLI
- IS62WV10248BLL-55BLI
- IS627
- IS623
- IS622
- IS621
- IS620
- IS61C67
- IS611X
- IS611
- IS610X
- IS610
- IS609
- IS608X
- IS608
- IS607X
- IS607
- IS6051
- IS604X
- IS604
- IS6030
- IS6015X
IS62WV2568BLL数据表相关新闻
IS62WV51216BLL-55TL
IS62WV51216BLL-55TL
2022-7-1IS62WV12816EBLL-45BLI
IS62WV12816EBLL-45BLI
2021-10-11IS61SF12832-8.5TQ
产品属性 属性值 搜索类似 制造商: ISSI 产品种类: 静态随机存取存储器 存储容量: 4 Mbit 访问时间: 8.5 ns 最大时钟频率: 90 MHz 电源电压-最大: 3.63 V 电源电压-最小: 3.135 V 电源电流—最大值: 230 mA 最小工作温度: 0 C 最大工作温度: + 70 C 安装风格: SMD/SMT 封装 / 箱体: TQFP-100 数
2020-7-13IS62WV5128ALL-70H，IS62WV2568ALL-70T，IS62WV5128BLL-55HLI，IS62WV5128BLL-55T2，IS62WV5128BLL-55T2I，IS62WV5128ALL-70TI，IS41C16100S-60TI，IS41C16128-40KI，IS41C16256-35T
IS62WV5128ALL-70H，IS62WV2568ALL-70T，IS62WV5128BLL-55HLI，IS62WV5128BLL-55T2，IS62WV5128BLL-55T2I，IS62WV5128ALL-70TI，IS41C16100S-60TI，IS41C16128-40KI，IS41C16256-35T
2020-1-1IS62WV5128BLL-55HLI
IS62WV5128BLL-55HLI，全新原装当天发货或门市自取0755-82732291.
2019-3-18IS62C256AL-45TLI进口原装假一赔十
瀚佳科技(深圳）有限公司： 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108
