型号 功能描述 生产厂家 企业 LOGO 操作
IS62WV2568BLL-70TI

256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV2568ALL / IS62WV2568BLL are highspeed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po

ISSI

矽成半导体

256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV2568ALL / IS62WV2568BLL are highspeed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po

ISSI

矽成半导体

256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vcc (62WV2568ALL) – 2.5V--3.6V Vcc (62WV2568BLL) • Fully static operation: no cloc

ISSI

矽成半导体

256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vcc (62WV2568ALL) – 2.5V--3.6V Vcc (62WV2568BLL) • Fully static operation: no cloc

ISSI

矽成半导体

256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV2568ALL / IS62WV2568BLL are highspeed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po

ISSI

矽成半导体

256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV2568ALL / IS62WV2568BLL are highspeed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po

ISSI

矽成半导体

IS62WV2568BLL-70TI产品属性

  • 类型

    描述

  • 型号

    IS62WV2568BLL-70TI

  • 功能描述

    静态随机存取存储器 2Mb 256Kx8 70ns 2.5v/3.6v

  • RoHS

  • 制造商

    Cypress Semiconductor

  • 存储容量

    16 Mbit

  • 组织

    1 M x 16

  • 访问时间

    55 ns

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.2 V

  • 最大工作电流

    22 uA

  • 最大工作温度

    + 85 C

  • 最小工作温度

    - 40 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    TSOP-48

  • 封装

    Tray

更新时间:2025-12-9 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
24+
NA/
3750
原装现货,当天可交货,原型号开票
ISSI
2016+
TSOP32
500
只做原装,假一罚十,公司可开17%增值税发票!
ISSI
24+
TSOP32
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
ISSI
1250+
TSOP32
20
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ISSI
TSOP-32
68500
一级代理 原装正品假一罚十价格优势长期供货
ISSI
24+
SMD
15600
静态随机存取存储器2Mb256Kx845nsAsync静态随机存取存
ISSI
2518+
TSOP32
9852
只做原装正品现货或订货假一赔十!
ISSI
24+
TSOP32
66500
只做全新原装进口现货
ISSI
25+23+
TSOP32
52743
绝对原装正品现货,全新深圳原装进口现货
ISSI
22+
TSOP-32
8000
原装正品支持实单

IS62WV2568BLL-70TI芯片相关品牌

IS62WV2568BLL-70TI数据表相关新闻