型号 功能描述 生产厂家 企业 LOGO 操作
IS62WV2568ALL

256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV2568ALL / IS62WV2568BLL are highspeed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po

ISSI

矽成半导体

IS62WV2568ALL

256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vcc (62WV2568ALL) – 2.5V--3.6V Vcc (62WV2568BLL) • Fully static operation: no cloc

ISSI

矽成半导体

256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vcc (62WV2568ALL) – 2.5V--3.6V Vcc (62WV2568BLL) • Fully static operation: no cloc

ISSI

矽成半导体

256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vcc (62WV2568ALL) – 2.5V--3.6V Vcc (62WV2568BLL) • Fully static operation: no cloc

ISSI

矽成半导体

256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV2568ALL / IS62WV2568BLL are highspeed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po

ISSI

矽成半导体

256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vcc (62WV2568ALL) – 2.5V--3.6V Vcc (62WV2568BLL) • Fully static operation: no cloc

ISSI

矽成半导体

256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV2568ALL / IS62WV2568BLL are highspeed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po

ISSI

矽成半导体

256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vcc (62WV2568ALL) – 2.5V--3.6V Vcc (62WV2568BLL) • Fully static operation: no cloc

ISSI

矽成半导体

256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV2568ALL / IS62WV2568BLL are highspeed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po

ISSI

矽成半导体

256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV2568ALL / IS62WV2568BLL are highspeed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po

ISSI

矽成半导体

256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vcc (62WV2568ALL) – 2.5V--3.6V Vcc (62WV2568BLL) • Fully static operation: no cloc

ISSI

矽成半导体

Serial SRAM & Low Pin Count SRAM

ISSI

矽成半导体

256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION The ISSI IS62WV2568ALL / IS62WV2568BLL are highspeed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low po

ISSI

矽成半导体

256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V Vcc (62WV2568ALL) – 2.5V--3.6V Vcc (62WV2568BLL) • Fully static operation: no cloc

ISSI

矽成半导体

TTL compatible interface levels

文件:468.53 Kbytes Page:14 Pages

ISSI

矽成半导体

IS62WV2568ALL产品属性

  • 类型

    描述

  • 型号

    IS62WV2568ALL

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

更新时间:2026-1-29 21:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
20+
TSOP32
19570
原装优势主营型号-可开原型号增税票
ISSI
0431+
TSOP32
193
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ISSI
24+
TSOP
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
ISSI
22+
TSOP32
20000
公司只做原装 品质保障
ISSI
21+
TSOP32
1975
ISSI
原厂封装
9800
原装进口公司现货假一赔百
ISSI
2015+
SMD/DIP
19889
一级代理原装现货,特价热卖!
GENNUM
24+
STSOP1(32)
12000
专营GENNUM品牌进口原装正品假一赔十可開17增值稅票
ISSI
25+
TSOP32
30000
房间原装现货特价热卖,有单详谈
ISSI
25+
5850
原厂原装,价格优势

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