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IS61C64价格
参考价格：￥11.6071
型号：IS61C6416AL-12KLI 品牌：ISSI 备注：这里有IS61C64多少钱，2025年最近7天走势，今日出价，今日竞价，IS61C64批发/采购报价，IS61C64行情走势销售排行榜，IS61C64报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo | ISSI 矽成半导体 |   | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES IS61C6416AL and IS64C6416AL • High-speed access time: 12 ns, 15ns • Low Active Power: 175 mW (typical) • Low Standby Power: 1 mW (typical) CMOS standby IS62C6416AL and IS65C6416AL • High-speed access time: 35 ns, 45ns • Low Active Power: 50 mW (typical) • Low Standby Power: 100 μ | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES IS61C6416AL and IS64C6416AL • High-speed access time: 12 ns, 15ns • Low Active Power: 175 mW (typical) • Low Standby Power: 1 mW (typical) CMOS standby IS62C6416AL and IS65C6416AL • High-speed access time: 35 ns, 45ns • Low Active Power: 50 mW (typical) • Low Standby Power: 100 μ | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES IS61C6416AL and IS64C6416AL • High-speed access time: 12 ns, 15ns • Low Active Power: 175 mW (typical) • Low Standby Power: 1 mW (typical) CMOS standby IS62C6416AL and IS65C6416AL • High-speed access time: 35 ns, 45ns • Low Active Power: 50 mW (typical) • Low Standby Power: 100 μ | ISSI 矽成半导体 | | ||
8K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C64AH is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15 ns with low power consump | ICSI | | ||
8K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C64AH is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15 ns with low power consump | ICSI | | ||
8K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C64AH is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15 ns with low power consump | ICSI | | ||
8K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C64AH is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15 ns with low power consump | ICSI | | ||
8K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C64AH is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15 ns with low power consump | ICSI | | ||
8K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C64AH is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15 ns with low power consump | ICSI | | ||
8K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IS61C64AH is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15 ns with low power consump | ICSI | | ||
8K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 10 ns • CMOS low power operation — 1 mW (typical) CMOS standby — 125 mW (typical) operating • TTL compatible interface levels • Single 5V power supply • Fully static operation: no clock or refresh required • Lead-free available | ISSI 矽成半导体 | | ||
8K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 10 ns • CMOS low power operation — 1 mW (typical) CMOS standby — 125 mW (typical) operating • TTL compatible interface levels • Single 5V power supply • Fully static operation: no clock or refresh required • Lead-free available | ISSI 矽成半导体 | | ||
8K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 10 ns • CMOS low power operation — 1 mW (typical) CMOS standby — 125 mW (typical) operating • TTL compatible interface levels • Single 5V power supply • Fully static operation: no clock or refresh required • Lead-free available | ISSI 矽成半导体 | | ||
8K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C64B is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with low power consumpt | ISSI 矽成半导体 | | ||
8K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C64B is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with low power consumpt | ISSI 矽成半导体 | | ||
8K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C64B is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with low power consumpt | ISSI 矽成半导体 | | ||
8K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C64B is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with low power consumpt | ISSI 矽成半导体 | | ||
8K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C64B is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with low power consumpt | ISSI 矽成半导体 | | ||
8K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C64B is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with low power consumpt | ISSI 矽成半导体 | | ||
8K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C64B is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with low power consumpt | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM 文件：92.57 Kbytes Page：17 Pages | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM 文件：97.51 Kbytes Page：17 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
5V High-Speed Asynchronous SRAM | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM 文件：92.57 Kbytes Page：17 Pages | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM 文件：92.57 Kbytes Page：17 Pages | ISSI 矽成半导体 | | ||
封装/外壳：44-BSOJ（0.400"，10.16mm 宽） 包装：卷带（TR） 描述：IC SRAM 1MBIT PARALLEL 44SOJ 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
封装/外壳：44-BSOJ（0.400"，10.16mm 宽） 包装：托盘 描述：IC SRAM 1MBIT PARALLEL 44SOJ 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
64K x 16 HIGH-SPEED CMOS STATIC RAM 文件：92.57 Kbytes Page：17 Pages | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM 文件：92.57 Kbytes Page：17 Pages | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM 文件：92.57 Kbytes Page：17 Pages | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM 文件：92.57 Kbytes Page：17 Pages | ISSI 矽成半导体 | | ||
8K x 8 HIGH-SPEED CMOS STATIC RAM 文件：104.55 Kbytes Page：13 Pages | ISSI 矽成半导体 | | ||
8K x 8 HIGH-SPEED CMOS STATIC RAM 文件：96.35 Kbytes Page：13 Pages | ISSI 矽成半导体 | | ||
5V High-Speed Asynchronous SRAM | ISSI 矽成半导体 | | ||
8K x 8 HIGH-SPEED CMOS STATIC RAM 文件：104.55 Kbytes Page：13 Pages | ISSI 矽成半导体 | | ||
8K x 8 HIGH-SPEED CMOS STATIC RAM 文件：96.35 Kbytes Page：13 Pages | ISSI 矽成半导体 | | ||
8K x 8 HIGH-SPEED CMOS STATIC RAM 文件：104.55 Kbytes Page：13 Pages | ISSI 矽成半导体 | | ||
8K x 8 HIGH-SPEED CMOS STATIC RAM 文件：104.55 Kbytes Page：13 Pages | ISSI 矽成半导体 | | ||
8K x 8 HIGH-SPEED CMOS STATIC RAM 文件：96.35 Kbytes Page：13 Pages | ISSI 矽成半导体 | | ||
8K x 8 HIGH-SPEED CMOS STATIC RAM 文件：104.55 Kbytes Page：13 Pages | ISSI 矽成半导体 | | ||
8K x 8 HIGH-SPEED CMOS STATIC RAM 文件：96.35 Kbytes Page：13 Pages | ISSI 矽成半导体 | | ||
8K x 8 HIGH-SPEED CMOS STATIC RAM 文件：104.55 Kbytes Page：13 Pages | ISSI 矽成半导体 | | ||
8K x 8 HIGH-SPEED CMOS STATIC RAM 文件：96.35 Kbytes Page：13 Pages | ISSI 矽成半导体 | | ||
8K x 8 HIGH-SPEED CMOS STATIC RAM | ISSI 矽成半导体 | |
IS61C64产品属性
- 类型
描述
- 型号
IS61C64
- 制造商
ISSI
- 制造商全称
Integrated Silicon Solution, Inc
- 功能描述
64K x 16 HIGH-SPEED CMOS STATIC RAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SI |
24+ |
NA/ |
3928 |
原装现货,当天可交货,原型号开票 |
|||
ICSI |
2016+ |
TSSOP |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ISSI |
24+ |
TSSOP |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
ISSI |
NEW |
TSSOP44 |
9231 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
ICSI |
25+23+ |
SMD |
39651 |
绝对原装正品全新进口深圳现货 |
|||
ISSI |
24+ |
TSSOP |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
ISSI |
22+ |
TSSOP |
8000 |
原装正品支持实单 |
|||
ISSI |
25+ |
17 |
公司优势库存 热卖中!! |
||||
ISSI |
22+ |
TQFP |
5000 |
全新原装现货!自家库存! |
|||
ISSI |
25+ |
TSSOP-44 |
76200 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
IS61C64规格书下载地址
IS61C64参数引脚图相关
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- jumper
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- IS7000
- IS-70
- IS662X
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- IS61LPS51236A-200TQLI
- IS61LPS51218A-200TQLI
- IS61LPS25636A-200TQLI
- IS61LPS25636A-200B3LI
- IS61LPS12836EC-200TQLI
- IS61LPS12836A-250TQL
- IS61LPS12836A-200TQLI
- IS61LPS102418B-200TQLI
- IS61LPS102418A-200TQLI
- IS61LP6432A-133TQLI
- IS61LF6436A-8.5TQLI
- IS61LF51236A-7.5TQLI
- IS61LF51218A-7.5TQLI
- IS61LF25636A-7.5TQLI
- IS61LF12836A-7.5TQLI
- IS61LF102418A-7.5TQLI
- IS61C67
- IS61C64AL-10JLI
- IS61C6416AL-12TLI-TR
- IS61C6416AL-12TLI
- IS61C6416AL-12KLI
- IS61C5128AS-25TLI-TR
- IS61C5128AS-25TLI
- IS61C5128AS-25QLI
- IS61C5128AL-10TLI
- IS61C5128AL-10KLI-TR
- IS61C5128AL-10KLI
- IS61C3216AL-12TLI
- IS61C256AL-12TLI
- IS61C256AL-12JLI-TR
- IS61C256AL-12JLI
- IS61C256AL-12J>
- IS61C25616AS-25TLI
- IS61C25616AL-10TLI
- IS61C25616AL-10KLI
- IS61C1024AL-12TLI
- IS61C1024AL-12KLI
- IS61C1024AL-12JLI-TR
- IS61C1024AL-12JLI
- IS611X
- IS611
- IS610X
- IS610
- IS609
- IS608X
- IS608
- IS607X
- IS607
- IS6051
- IS604X
- IS604
- IS6030
- IS602-Y-2
- IS601-YSY-6
- IS6015X
- IS6015
- IS6010X
- IS6010
- IS6005X
- IS6005
- IS6003
IS61C64数据表相关新闻
IS61C1024AL-12KLI
进口代理
2022-9-21IS61C5128AS-25TLI
进口代理
2022-8-10IS61LV25616AL-10T现货热卖！！！！
IS61LV25616AL-10T现货热卖！！！！
2021-7-7IS61SF12832-8.5TQ
原装正品 热卖 假一赔十
2020-7-13IS46TR16256AL-125KBLA2
4 Gbit FBGA-96 SDRAM - DDR3 动态随机存取存储器 , 2 Gbit SDRAM - DDR2 16 bit 动态随机存取存储器 , FBGA-84 16 bit 动态随机存取存储器 , 4 Gbit SDRAM - DDR3L - 40 C 动态随机存取存储器 , TSOP-54 动态随机存取存储器 , AS4C256M16D4-75 动态随机存取存储器
2020-7-9IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
2020-1-1
DdatasheetPDF页码索引
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