8K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C64B is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with low power consumpt

8K x 8 HIGH-SPEED CMOS STATIC RAM

8K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C64B is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with low power consumpt

8K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C64B is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with low power consumpt

8K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C64B is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with low power consumpt

8K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C64B is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with low power consumpt

8K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C64B is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with low power consumpt

8K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C64B is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with low power consumpt

8K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IS61C64AH is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15 ns with low power consump

8K x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES • High-speed access time: 10 ns • CMOS low power operation — 1 mW (typical) CMOS standby — 125 mW (typical) operating • TTL compatible interface levels • Single 5V power supply • Fully static operation: no clock or refresh required • Lead-free available

8K x 8 HIGH-SPEED CMOS STATIC RAM

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8K x 8 HIGH-SPEED CMOS STATIC RAM

文件：104.55 Kbytes Page：13 Pages