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IS61C6416价格
参考价格：￥11.6071
型号：IS61C6416AL-12KLI 品牌：ISSI 备注：这里有IS61C6416多少钱，2026年最近7天走势，今日出价，今日竞价，IS61C6416批发/采购报价，IS61C6416行情走势销售排行榜，IS61C6416报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IS61C6416 | 64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo | ISSI 矽成半导体 |   | |
IS61C6416 | ASYNCHRONOUS STATIC RAM, High Speed A.SRAM | ISSI 矽成半导体 | | |
64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES IS61C6416AL and IS64C6416AL • High-speed access time: 12 ns, 15ns • Low Active Power: 175 mW (typical) • Low Standby Power: 1 mW (typical) CMOS standby IS62C6416AL and IS65C6416AL • High-speed access time: 35 ns, 45ns • Low Active Power: 50 mW (typical) • Low Standby Power: 100 μ | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES IS61C6416AL and IS64C6416AL • High-speed access time: 12 ns, 15ns • Low Active Power: 175 mW (typical) • Low Standby Power: 1 mW (typical) CMOS standby IS62C6416AL and IS65C6416AL • High-speed access time: 35 ns, 45ns • Low Active Power: 50 mW (typical) • Low Standby Power: 100 μ | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES IS61C6416AL and IS64C6416AL • High-speed access time: 12 ns, 15ns • Low Active Power: 175 mW (typical) • Low Standby Power: 1 mW (typical) CMOS standby IS62C6416AL and IS65C6416AL • High-speed access time: 35 ns, 45ns • Low Active Power: 50 mW (typical) • Low Standby Power: 100 μ | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM 文件：97.51 Kbytes Page：17 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
5V High-Speed Asynchronous SRAM | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM 文件：92.57 Kbytes Page：17 Pages | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM 文件：92.57 Kbytes Page：17 Pages | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM 文件：92.57 Kbytes Page：17 Pages | ISSI 矽成半导体 | | ||
封装/外壳：44-BSOJ（0.400"，10.16mm 宽） 包装：卷带（TR） 描述：IC SRAM 1MBIT PARALLEL 44SOJ 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
封装/外壳：44-BSOJ（0.400"，10.16mm 宽） 包装：托盘 描述：IC SRAM 1MBIT PARALLEL 44SOJ 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
64K x 16 HIGH-SPEED CMOS STATIC RAM 文件：92.57 Kbytes Page：17 Pages | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM 文件：92.57 Kbytes Page：17 Pages | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM 文件：92.57 Kbytes Page：17 Pages | ISSI 矽成半导体 | | ||
64K x 16 HIGH-SPEED CMOS STATIC RAM 文件：92.57 Kbytes Page：17 Pages | ISSI 矽成半导体 | | ||
64K X 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IC61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with l | ICSI | |
IS61C6416产品属性
- 类型
描述
- 型号
IS61C6416
- 制造商
ISSI
- 制造商全称
Integrated Silicon Solution, Inc
- 功能描述
64K x 16 HIGH-SPEED CMOS STATIC RAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI |
存储器 |
TSOP |
41920 |
ISSI存储芯片IS61C6416AL-12TLI即刻询购立享优惠#长期有货 |
|||
ISSI |
98+ |
TSOP44 |
16 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INTEGRATEDSILICONSOLUTIONINC |
24+ |
160575 |
明嘉莱只做原装正品现货 |
||||
ISSI |
24+/25+ |
30 |
原装正品现货库存价优 |
||||
ISSI |
2450+ |
SOJ44 |
6540 |
只做原厂原装正品现货或订货!终端工厂可以申请样品! |
|||
ISSI |
23+ |
SOJ |
20000 |
原装进口ICMCUSOCMOS等知名国内外品牌只做原装全 |
|||
ISSI |
25+ |
5 |
公司优势库存 热卖中!! |
||||
ISSI |
25+ |
SOJ |
3000 |
全新原装、诚信经营、公司现货销售 |
|||
ISSI |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
|||
ISSI |
2025+ |
SOJ |
3783 |
全新原装、公司现货热卖 |
IS61C6416规格书下载地址
IS61C6416参数引脚图相关
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- IS61LP6432A-133TQLI
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- IS61C67
- IS61C64AL-10JLI
- IS61C6416AL-12TLI-TR
- IS61C6416AL-12TLI
- IS61C6416AL-12KLI
- IS61C5128AS-25TLI-TR
- IS61C5128AS-25TLI
- IS61C5128AS-25QLI
- IS61C5128AL-10TLI
- IS61C5128AL-10KLI-TR
- IS61C5128AL-10KLI
- IS61C3216AL-12TLI
- IS61C256AL-12TLI
- IS61C256AL-12JLI-TR
- IS61C256AL-12JLI
- IS61C256AL-12J>
- IS61C25616AS-25TLI
- IS61C25616AL-10TLI
- IS61C25616AL-10KLI
- IS61C1024AL-12TLI
- IS61C1024AL-12KLI
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IS61C6416数据表相关新闻
IS61C1024AL-12KLI
进口代理
2022-9-21IS61C5128AS-25TLI
进口代理
2022-8-10IS61LV25616AL-10T现货热卖！！！！
IS61LV25616AL-10T现货热卖！！！！
2021-7-7IS61SF12832-8.5TQ
原装正品 热卖 假一赔十
2020-7-13IS46TR16256AL-125KBLA2
4 Gbit FBGA-96 SDRAM - DDR3 动态随机存取存储器 , 2 Gbit SDRAM - DDR2 16 bit 动态随机存取存储器 , FBGA-84 16 bit 动态随机存取存储器 , 4 Gbit SDRAM - DDR3L - 40 C 动态随机存取存储器 , TSOP-54 动态随机存取存储器 , AS4C256M16D4-75 动态随机存取存储器
2020-7-9IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
2020-1-1
DdatasheetPDF页码索引
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