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IS61C6416价格

参考价格：￥11.6071

型号：IS61C6416AL-12KLI 品牌：ISSI 备注：这里有IS61C6416多少钱，2026年最近7天走势，今日出价，今日竞价，IS61C6416批发/采购报价，IS61C6416行情走势销售排行榜，IS61C6416报价。

型号	功能描述	生产厂家企业	LOGO
IS61C6416	64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo	ISSI 矽成半导体	ISSI
IS61C6416	ASYNCHRONOUS STATIC RAM, High Speed A.SRAM	ISSI 矽成半导体	ISSI
IS61C6416-10K	64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo	ISSI 矽成半导体	ISSI
IS61C6416-10T	64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo	ISSI 矽成半导体	ISSI
IS61C6416-12K	64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo	ISSI 矽成半导体	ISSI
IS61C6416-12KI	64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo	ISSI 矽成半导体	ISSI
IS61C6416-12T	64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo	ISSI 矽成半导体	ISSI
IS61C6416-12TI	64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo	ISSI 矽成半导体	ISSI
IS61C6416-15K	64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo	ISSI 矽成半导体	ISSI
IS61C6416-15KI	64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo	ISSI 矽成半导体	ISSI
IS61C6416-15T	64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo	ISSI 矽成半导体	ISSI
IS61C6416-15TI	64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo	ISSI 矽成半导体	ISSI
IS61C6416-20K	64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo	ISSI 矽成半导体	ISSI
IS61C6416-20KI	64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo	ISSI 矽成半导体	ISSI
IS61C6416-20T	64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo	ISSI 矽成半导体	ISSI
IS61C6416-20TI	64K x 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo	ISSI 矽成半导体	ISSI
IS61C6416AL	64K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES IS61C6416AL and IS64C6416AL • High-speed access time: 12 ns, 15ns • Low Active Power: 175 mW (typical) • Low Standby Power: 1 mW (typical) CMOS standby IS62C6416AL and IS65C6416AL • High-speed access time: 35 ns, 45ns • Low Active Power: 50 mW (typical) • Low Standby Power: 100 μ	ISSI 矽成半导体	ISSI
IS61C6416AL_V01	64K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES IS61C6416AL and IS64C6416AL • High-speed access time: 12 ns, 15ns • Low Active Power: 175 mW (typical) • Low Standby Power: 1 mW (typical) CMOS standby IS62C6416AL and IS65C6416AL • High-speed access time: 35 ns, 45ns • Low Active Power: 50 mW (typical) • Low Standby Power: 100 μ	ISSI 矽成半导体	ISSI
IS61C6416AL-12TLI	64K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES IS61C6416AL and IS64C6416AL • High-speed access time: 12 ns, 15ns • Low Active Power: 175 mW (typical) • Low Standby Power: 1 mW (typical) CMOS standby IS62C6416AL and IS65C6416AL • High-speed access time: 35 ns, 45ns • Low Active Power: 50 mW (typical) • Low Standby Power: 100 μ	ISSI 矽成半导体	ISSI
IS61C6416AL	64K x 16 HIGH-SPEED CMOS STATIC RAM 文件：92.57 Kbytes Page：17 Pages	ISSI 矽成半导体	ISSI
IS61C6416AL	64K x 16 HIGH-SPEED CMOS STATIC RAM 文件：97.51 Kbytes Page：17 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
IS61C6416AL	5V High-Speed Asynchronous SRAM	ISSI 矽成半导体	ISSI
IS61C6416AL-12K	64K x 16 HIGH-SPEED CMOS STATIC RAM 文件：92.57 Kbytes Page：17 Pages	ISSI 矽成半导体	ISSI
IS61C6416AL-12KI	64K x 16 HIGH-SPEED CMOS STATIC RAM 文件：92.57 Kbytes Page：17 Pages	ISSI 矽成半导体	ISSI
IS61C6416AL-12KI-TR	封装/外壳：44-BSOJ（0.400"，10.16mm 宽）包装：卷带（TR）描述：IC SRAM 1MBIT PARALLEL 44SOJ 集成电路（IC）存储器	ETC 知名厂家	ETC
IS61C6416AL-12KLI	64K x 16 HIGH-SPEED CMOS STATIC RAM 文件：92.57 Kbytes Page：17 Pages	ISSI 矽成半导体	ISSI
IS61C6416AL-12KLI	封装/外壳：44-BSOJ（0.400"，10.16mm 宽）包装：托盘描述：IC SRAM 1MBIT PARALLEL 44SOJ 集成电路（IC）存储器	ETC 知名厂家	ETC
IS61C6416AL-12T	64K x 16 HIGH-SPEED CMOS STATIC RAM 文件：92.57 Kbytes Page：17 Pages	ISSI 矽成半导体	ISSI
IS61C6416AL-12TI	64K x 16 HIGH-SPEED CMOS STATIC RAM 文件：92.57 Kbytes Page：17 Pages	ISSI 矽成半导体	ISSI
IS61C6416AL-12TLI	64K x 16 HIGH-SPEED CMOS STATIC RAM 文件：92.57 Kbytes Page：17 Pages	ISSI 矽成半导体	ISSI
IC61C6416	64K X 16 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ICSI IC61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with l	ICSI	ICSI

IS61C6416产品属性

类型
描述
型号
IS61C6416
制造商
ISSI
制造商全称
Integrated Silicon Solution, Inc
功能描述
64K x 16 HIGH-SPEED CMOS STATIC RAM

IS61C6416供应商更多...

更新时间：2026-1-27 19:10:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市明嘉莱科技有限公司	IS61C6416AL-12TLI	INTEGRATEDSILICONSOLUTIONINC	24+		160575	明嘉莱只做原装正品现货	询价
深圳市赛美科科技有限公司	IS61C6416-12K	ISSI		SOJ	5350	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市赛尔通科技有限公司	IS61C6416AL-12TLI	ISSI	23+	TSOP	8500		询价
千层芯半导体(深圳)有限公司	IS61C6416-12K	ISSI	24+	SOJ	30617	主打ISSI品牌价格绝对优势	询价
深圳市豪迈兴电子有限公司	IS61C6416-12K	ISSI	24+	SOJ	5825	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
标准国际(香港)有限公司	IS61C6416-12K	ISSI	25+		5	公司优势库存热卖中!!	询价
芯有半导体（深圳）有限公司	IS61C6416AL-12TLI	ISSI	2008	TSOP	4635	厂家指定一级分销全新原装现货价	询价
谛辉(北京/上海/青岛 )电子科技有限公司	IS61C6416-10T	ISSI	25+	TSOP-44	18000	原厂直接发货进口原装	询价
洪芯国际半导体（深圳）有限公司	IS61C6416-15TI	ISSI	26+	TSSOP-44	76200	全新原装进口现货,,本公司承诺原装正品假一赔百	询价
深圳市恒达亿科技有限公司	IS61C6416-12K	ISSI	25+	SOJ	3000	全新原装、诚信经营、公司现货销售	询价

IS61C6416芯片相关品牌

IS61C6416规格书下载地址

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IS61C6416数据表相关新闻

IS61C1024AL-12KLI
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2022-9-21
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IS61LV25616AL-10T现货热卖！！！！
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IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
2020-1-1

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IS61C6416价格

IS61C6416产品属性

IS61C6416供应商更多...

IS61C6416芯片相关品牌

IS61C6416规格书下载地址

IS61C6416参数引脚图相关

IS61C6416数据表相关新闻

IS61C1024AL-12KLI

IS61C5128AS-25TLI

IS61LV25616AL-10T现货热卖！！！！

IS61SF12832-8.5TQ

IS46TR16256AL-125KBLA2

IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T

DdatasheetPDF页码索引