IRLI630G价格

参考价格:¥8.0042

型号:IRLI630GPBF 品牌:Vishay 备注:这里有IRLI630G多少钱,2025年最近7天走势,今日出价,今日竞价,IRLI630G批发/采购报价,IRLI630G行情走势销售排行榜,IRLI630G报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRLI630G

Power MOSFET

VDS (V) 200 RDS(on) (Ω) VGS = 5.0 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectivenes

VishayVishay Siliconix

威世科技

IRLI630G

Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=6.2A)

VDSS = 200V RDS(on) = 0.40Ω ID = 6.2A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional ins

IRF

IRLI630G

Power MOSFET

文件:1.04117 Mbytes Page:10 Pages

VishayVishay Siliconix

威世科技

HEXFET Power MOSFET

VDSS = 200V RDS(on) = 0.40Ω ID = 6.2A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional ins

IRF

Power MOSFET

VDS (V) 200 RDS(on) (Ω) VGS = 5.0 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectivenes

VishayVishay Siliconix

威世科技

HEXFET Power MOSFET

VDSS = 200V RDS(on) = 0.40Ω ID = 6.2A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional ins

IRF

Power MOSFET

文件:1.04117 Mbytes Page:10 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

文件:1.04117 Mbytes Page:10 Pages

VishayVishay Siliconix

威世科技

MOSFET N-CH200V HEXFET MOSFET

VishayVishay Siliconix

威世科技

9A 200V N-channel Enhancement Mode Power MOSFET

1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. 2 Features ● Fast Switching ● Low ON Resistance(Rdso

WXDH

东海半导体

Fast switching

Features • Fast switching • 100% avalanche tested • Improved dv/dt capability Application • DC Motor Control and Class D Amplifier • Uninterruptible Power Supply (UPS) • Automotive

GOFORD

谷峰半导体

Fast switching

Features · Fast switching · 100 avalanche tested · Improved dv/dt capability Application · DC Motor Control and Class D Amplifier · Uninterruptible Power Supply (UPS) · Automotive

ETCList of Unclassifed Manufacturers

未分类制造商

Low Frequencies

文件:141.01 Kbytes Page:2 Pages

OSCILENT

COMPACT DIGITAL THERMOMETERS & THERMO-HYGROMETERS

文件:87.55 Kbytes Page:1 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

IRLI630G产品属性

  • 类型

    描述

  • 型号

    IRLI630G

  • 功能描述

    MOSFET N-Chan 200V 6.2 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-9-19 8:48:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
V
23+
TO-220F
6000
原装正品,支持实单
IR
21+
TO-220F
10000
原装现货假一罚十
SILICONIXVISHAY
24+
NA
1000
原装现货,专业配单专家
SILICONIXVISHAY
21+
NA
1820
只做原装,一定有货,不止网上数量,量多可订货!
IR
24+
TO 220F
161237
明嘉莱只做原装正品现货
IR
24+
NA/
3400
优势代理渠道,原装正品,可全系列订货开增值税票
VISHAY/威世
25+
TO-220FP(TO-220FPAB)
32360
VISHAY/威世全新特价IRLI630GPBF即刻询购立享优惠#长期有货
SILICONIXVISHAY
2450+
NA
9850
只做原厂原装正品现货或订货假一赔十!
IR
23+
TO-220F
35890
IR
TO-220F
68500
一级代理 原装正品假一罚十价格优势长期供货

IRLI630G数据表相关新闻