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IRLI630G中文资料
IRLI630G数据手册规格书PDF详情
VDSS = 200V
RDS(on) = 0.40Ω
ID = 6.2A
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
● Isolated Package
● High Voltage Isolation = 2.5KVRMS
● Sink to Lead Creepage Dist. 4.8mm
● Logic-Level Gate Drive
● RDS(ON) Specified at VGS = 4V & 5V
● Fast Switching
● Ease of paralleling
IRLI630G产品属性
- 类型
描述
- 型号
IRLI630G
- 功能描述
MOSFET N-Chan 200V 6.2 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
VISHAY/威世 |
25+ |
TO-220FP(TO-220FPAB) |
32360 |
VISHAY/威世全新特价IRLI630GPBF即刻询购立享优惠#长期有货 |
|||
IR |
24+ |
TO 220F |
161237 |
明嘉莱只做原装正品现货 |
|||
IR |
2015+ |
TO-220F |
12500 |
全新原装,现货库存长期供应 |
|||
IR |
24+ |
TO-220FullPak(Iso) |
8866 |
||||
IR |
24+ |
TO-220F |
5000 |
全现原装公司现货 |
|||
VISHAY |
25+ |
TO220-3 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
|||
IR |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
|||
IR |
21+ |
TO-220F |
10000 |
原装现货假一罚十 |
|||
Vishay Siliconix |
22+ |
TO2203 Isolated Tab |
9000 |
原厂渠道,现货配单 |
|||
IR |
0424+ |
TO-220F |
3400 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
IRLI630GPBF 价格
参考价格:¥8.0042
IRLI630G 资料下载更多...
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