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IRLI630GPBF.数据手册规格书PDF详情
VDSS = 200V
RDS(on) = 0.40Ω
ID = 6.2A
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
● Isolated Package
● High Voltage Isolation = 2.5KVRMS
● Sink to Lead Creepage Dist. 4.8mm
● Logic-Level Gate Drive
● RDS(ON) Specified at VGS = 4V & 5V
● Fast Switching
● Ease of paralleling
● Lead-free
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
|||
IR |
23+24 |
TO-220F |
59630 |
主营原装MOS,二三级管,肖特基,功率场效应管 |
|||
仙童 |
06+ |
TO-262 |
2500 |
原装库存 |
|||
IR |
22+ |
TO-220F |
6000 |
终端可免费供样,支持BOM配单 |
|||
IR |
23+ |
TO-220F |
7000 |
||||
VB |
21+ |
TO-220F |
10000 |
原装现货假一罚十 |
|||
I |
25+ |
TO-TO-220F |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
IR |
17+ |
TO-220F |
6200 |
||||
IR |
24+ |
TO-220FullPak(Iso) |
8866 |
||||
IR |
23+ |
TO-220F |
6950 |
专做原装正品,假一罚百! |
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