VDS (V) 200

RDS(on) (Ω) VGS = 5.0 V 0.40

Qg (Max.) (nC) 40

Qgs (nC) 5.5

Qgd (nC) 24

Configuration Single

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.

FEATURES

• Isolated Package

• High Voltage Isolation = 2.5 kVRMS (t = 60 s;f = 60 Hz)

• Sink to Lead Creepage Distance = 4.8 mm

• Logic-Level Gate Drive

• RDS(on) Specified at VGS = 4 V and 5V

• Fast Switching

• Ease of paralleling

• Lead (Pb)-free Available