ADVANCED POWER MOSFET

BVDSS = 200 V RDS(on) = 0.4Ω ID = 9 A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.

Advanced Power MOSFET

BVDSS = 200 V RDS(on) = 0.4Ω ID = 9 A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.

Power MOSFET

VDS (V) 200 RDS(on) (Ω) VGS = 5.0 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectivenes

Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=6.2A)

VDSS = 200V RDS(on) = 0.40Ω ID = 6.2A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional ins

Power MOSFET

VDS (V) 200 RDS(on) (Ω) VGS = 5.0 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectivenes

HEXFET Power MOSFET

VDSS = 200V RDS(on) = 0.40Ω ID = 6.2A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional ins

HEXFET Power MOSFET

VDSS = 200V RDS(on) = 0.40Ω ID = 6.2A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional ins

isc N-Channel MOSFET Transistor

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Advanced Power MOSFET

Power MOSFET

文件：1.04117 Mbytes Page：10 Pages

Power MOSFET

文件：1.04117 Mbytes Page：10 Pages

MOSFET N-CH200V HEXFET MOSFET

Power MOSFET

文件：1.04117 Mbytes Page：10 Pages

9A 200V N-channel Enhancement Mode Power MOSFET

1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. 2 Features ● Fast Switching ● Low ON Resistance(Rdso

Fast switching

Features • Fast switching • 100% avalanche tested • Improved dv/dt capability Application • DC Motor Control and Class D Amplifier • Uninterruptible Power Supply (UPS) • Automotive

Fast switching

Features · Fast switching · 100 avalanche tested · Improved dv/dt capability Application · DC Motor Control and Class D Amplifier · Uninterruptible Power Supply (UPS) · Automotive

Low Frequencies

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COMPACT DIGITAL THERMOMETERS & THERMO-HYGROMETERS

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