IRL2203价格

参考价格:¥7.4948

型号:IRL2203NLPBF 品牌:International 备注:这里有IRL2203多少钱,2025年最近7天走势,今日出价,今日竞价,IRL2203批发/采购报价,IRL2203行情走势销售排行榜,IRL2203报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRL2203

Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A??

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

IRL2203

Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A⑦)

Infineon

英飞凌

Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A??

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A??

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

HEXFET짰 Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

HEXFET짰 Power MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A??

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

HEXFET짰 Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

Power MOSFET(Vdss=30V, Rds(on)=0.007ohm, Id=100A??

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

IRF

N-Channel MOSFET Transistor

文件:338.89 Kbytes Page:2 Pages

ISC

无锡固电

Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A⑦)

Infineon

英飞凌

Advanced Process Technology

文件:192.01 Kbytes Page:9 Pages

IRF

Advanced Process Technology

文件:192.01 Kbytes Page:9 Pages

IRF

30V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

Infineon

英飞凌

isc N-Channel MOSFET Transistor

文件:263.11 Kbytes Page:2 Pages

ISC

无锡固电

Advanced Process Technology

文件:295.79 Kbytes Page:10 Pages

IRF

Advanced Process Technology

文件:295.79 Kbytes Page:10 Pages

IRF

T-1 Subminiature Lamps

T-1¾ Wire Lead T-1¾ Miniature Flanged T-1¾ Miniature Grooved T-1¾ Midget Screw T-1¾ Bi-Pin

GILWAY

FEMALE THREADED STANDOFFS

[KEYSTONE] THREADED STANDOFFS

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

high Current Toroid Inductors

[J.W.Miller]

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

LOG114EVM User Guide

文件:571.52 Kbytes Page:21 Pages

TI

德州仪器

Extra Dome Plugs

文件:151.58 Kbytes Page:1 Pages

Heyco

IRL2203产品属性

  • 类型

    描述

  • 型号

    IRL2203

  • 制造商

    IRF

  • 制造商全称

    International Rectifier

  • 功能描述

    Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A)

更新时间:2025-9-26 8:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO263
90000
原装现货实单必成
IR
17+
TO-220
6200
IR
24+
TO 262
161172
明嘉莱只做原装正品现货
INFINEON/英飞凌
19+
TO-220
100
进口原装支持含税
原厂原包
24+
原装
38560
原装进口现货,工厂客户可以放款。17377264928微信同
IR
24+
原厂封装
3500
原装现货假一罚十
IR
23+
TO-220-3
11846
一级代理商现货批发,原装正品,假一罚十
INFINEON/英飞凌
25+
TO-220
32360
INFINEON/英飞凌全新特价IRL2203NPBF即刻询购立享优惠#长期有货
IR
23+
NA
146
专做原装正品,假一罚百!
IR
2450+
TO-263
9850
只做原装正品现货或订货假一赔十!

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