IRL2203价格
参考价格:¥7.4948
型号:IRL2203NLPBF 品牌:International 备注:这里有IRL2203多少钱,2026年最近7天走势,今日出价,今日竞价,IRL2203批发/采购报价,IRL2203行情走势销售排行榜,IRL2203报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRL2203 | Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A?? Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, | IRF | ||
IRL2203 | Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A⑦) | INFINEON 英飞凌 | ||
Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A?? Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, | IRF | |||
Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A?? Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, | IRF | |||
HEXFET짰 Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, | IRF | |||
Advanced Process Technology Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, | IRF | |||
HEXFET짰 Power MOSFET Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, | IRF | |||
Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A?? Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, | IRF | |||
30V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装 \n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 完全雪崩额定值\n• 逻辑电平; | INFINEON 英飞凌 | |||
HEXFET짰 Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, | IRF | |||
Advanced Process Technology Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, | IRF | |||
Advanced Process Technology Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, | IRF | |||
Power MOSFET(Vdss=30V, Rds(on)=0.007ohm, Id=100A?? Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi | IRF | |||
N-Channel MOSFET Transistor 文件:338.89 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A⑦) | INFINEON 英飞凌 | |||
Advanced Process Technology 文件:192.01 Kbytes Page:9 Pages | IRF | |||
Advanced Process Technology 文件:192.01 Kbytes Page:9 Pages | IRF | |||
丝印代码:D2PAK;isc N-Channel MOSFET Transistor 文件:263.11 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Advanced Process Technology 文件:295.79 Kbytes Page:10 Pages | IRF | |||
Advanced Process Technology 文件:295.79 Kbytes Page:10 Pages | IRF | |||
RGB Video Amplifier System for Monitors Description The U2203B-A is a wideband video amplifier IC system especially designed for use in high-resolution RGB monitors. The IC includes three well matched video amplifiers, three gated differential amplifiers for blacklevel clamping and brightness control and the function for simultaneously | TEMIC | |||
NV Controller With Battery Monitor 文件:82.03 Kbytes Page:12 Pages | TI 德州仪器 | |||
NV Controller With Battery Monitor 文件:82.03 Kbytes Page:12 Pages | TI 德州仪器 | |||
FULL BALANCED MIXER 文件:220.92 Kbytes Page:5 Pages | NJRC 日本无线 | |||
FULL BALANCED MIXER 文件:220.92 Kbytes Page:5 Pages | NJRC 日本无线 |
IRL2203产品属性
- 类型
描述
- Package :
TO-220
- VDS max:
30.0V
- RDS (on)(@10V) max:
7.0mΩ
- RDS (on) max:
7.0mΩ
- RDS (on)(@4.5V) max:
10.0mΩ
- Polarity :
N
- ID (@ TC=100°C) max:
71.0A
- ID max:
71.0A
- ID (@ TC=25°C) max:
100.0A
- Ptot max:
130.0W
- QG :
40.0nC
- Mounting :
THT
- RthJC max:
1.2K/W
- Tj max:
175.0°C
- VGS max:
16.0V
- Qgd :
22.0nC
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
25+ |
TO-220 |
20540 |
保证进口原装现货假一赔十 |
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IR |
2450+ |
TO-263 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
Infineon(英飞凌) |
24+ |
TO220 |
13236 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
INFINEON/英飞凌 |
25+ |
TO-220 |
32360 |
INFINEON/英飞凌全新特价IRL2203NPBF即刻询购立享优惠#长期有货 |
|||
IR |
23+ |
TO-263 |
65400 |
||||
IR |
25+ |
TO-220 |
9600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
IR |
24+ |
TO-263 |
8150 |
绝对原装现货,价格低,欢迎询购! |
|||
IR |
2021+ |
TO-220 |
9000 |
原装现货,随时欢迎询价 |
|||
IR |
ROHS全新原装 |
TO-263 |
9782 |
原装现货在线咨询样品※技术支持专业电子元器件授权 |
|||
IR |
16+ |
TO-220 |
6181 |
全新原装/深圳现货库2 |
IRL2203芯片相关品牌
IRL2203规格书下载地址
IRL2203参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRL510L
- IRL510A
- IRL510
- IRL3803
- IRL3716
- IRL3715
- IRL3714
- IRL3713
- IRL3705ZSPBF
- IRL3705ZPBF
- IRL3705ZLPBF
- IRL3705NSTRLPBF
- IRL3705NSPBF
- IRL3705NPBF
- IRL3502
- IRL3402
- IRL3303LPBF
- IRL3303
- IRL3302
- IRL3215
- IRL3202
- IRL3103PBF
- IRL3103
- IRL3102
- IRL2910STRLPBF
- IRL2910SPBF
- IRL2910PBF
- IRL2910HR
- IRL2910
- IRL2703PBF
- IRL2703
- IRL2505STRLPBF
- IRL2505SPBF
- IRL2505PBF
- IRL2505
- IRL2310
- IRL2203NSTRLPBF
- IRL2203NSPBF
- IRL2203NPBF
- IRL2203NLPBF
- IRL220
- IRL1404ZSTRLPBF
- IRL1404ZSPBF
- IRL1404ZSHR
- IRL1404ZPBF
- IRL1404ZLPBF
- IRL1404STRLPBF
- IRL1404SPBF
- IRL1404PBF
- IRL1404
- IRL1104
- IRL1004STRRPBF
- IRL1004STRLPBF
- IRL1004SPBF
- IRL1004PBF
- IRL1004
- IRL10
- IRL04EAB300X200X0.25
- IRKV105
- IRKU71
- IRKU41
- IRKU105
- IRKTF82
- IRKTF72
- IRKT92
- IRKT71-4
- IRKT71
- IRKT70
- IRKT570
- IRKT55
- IRKT500
- IRKT41
- IRKT40
- IRKT330
- IRKT136-14
- IRKL41-12
- IRJ04AB300X200X0.25
- IR-GSMPB-02-C5
- IRGSL6B60KDPBF
- IRGSL4B60KD1PBF
IRL2203数据表相关新闻
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2020-1-12IRL2203NPBF 原装现货热卖!!!!
IRL2203NPBF 厂家:IR 封装:TO-220 现货热卖 原厂原包装,只做原装,假一赔万 !!! 欢迎致电 上海意淼张小姐 18301798078 021-61316368 QQ:2719102545
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2019-5-8
DdatasheetPDF页码索引
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