IRL2203价格

参考价格:¥7.4948

型号:IRL2203NLPBF 品牌:International 备注:这里有IRL2203多少钱,2026年最近7天走势,今日出价,今日竞价,IRL2203批发/采购报价,IRL2203行情走势销售排行榜,IRL2203报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRL2203

Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A??

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

IRL2203

Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A⑦)

Infineon

英飞凌

Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A??

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A??

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

HEXFET짰 Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

HEXFET짰 Power MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A??

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

HEXFET짰 Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

Power MOSFET(Vdss=30V, Rds(on)=0.007ohm, Id=100A??

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

IRF

N-Channel MOSFET Transistor

文件:338.89 Kbytes Page:2 Pages

ISC

无锡固电

Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A⑦)

Infineon

英飞凌

Advanced Process Technology

文件:192.01 Kbytes Page:9 Pages

IRF

Advanced Process Technology

文件:192.01 Kbytes Page:9 Pages

IRF

30V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

Infineon

英飞凌

isc N-Channel MOSFET Transistor

文件:263.11 Kbytes Page:2 Pages

ISC

无锡固电

Advanced Process Technology

文件:295.79 Kbytes Page:10 Pages

IRF

Advanced Process Technology

文件:295.79 Kbytes Page:10 Pages

IRF

T-1 Subminiature Lamps

T-1¾ Wire Lead T-1¾ Miniature Flanged T-1¾ Miniature Grooved T-1¾ Midget Screw T-1¾ Bi-Pin

GILWAY

high Current Toroid Inductors

[J.W.Miller]

ETCList of Unclassifed Manufacturers

未分类制造商

FEMALE THREADED STANDOFFS

[KEYSTONE] THREADED STANDOFFS

ETCList of Unclassifed Manufacturers

未分类制造商

LOG114EVM User Guide

文件:571.52 Kbytes Page:21 Pages

TI

德州仪器

Extra Dome Plugs

文件:151.58 Kbytes Page:1 Pages

Heyco

IRL2203产品属性

  • 类型

    描述

  • 型号

    IRL2203

  • 制造商

    IRF

  • 制造商全称

    International Rectifier

  • 功能描述

    Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A)

更新时间:2026-1-2 11:04:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
2020+
TO-220
22000
全新原装正品 现货库存 价格优势
IR
24+
TO-220AB
10000
只做原装欢迎含税交易,假一赔十,放心购买
Infineon(英飞凌)
24+
D2PAK
8357
支持大陆交货,美金交易。原装现货库存。
IR(国际整流器)
24+
N/A
15409
原厂可订货,技术支持,直接渠道。可签保供合同
IR
23+/24+
TO-220
9865
主推型号,原装正品,终端BOM表可配单,可开13点税
IR
16+
TO-220
6181
全新原装/深圳现货库2
INFINEON/英飞凌
25+
TO-220
5708
全新原装现货特价销售,欢迎来电查询
IR
2021+
TO-220
9000
原装现货,随时欢迎询价
IR
2450+
TO-263
9850
只做原装正品现货或订货假一赔十!
IR
23+
TO-263
65400

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