IRL2203价格

参考价格:¥7.4948

型号:IRL2203NLPBF 品牌:International 备注:这里有IRL2203多少钱,2025年最近7天走势,今日出价,今日竞价,IRL2203批发/采购报价,IRL2203行情走势销售排行榜,IRL2203报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRL2203

Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A??

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A??

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A??

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

HEXFET짰 Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

HEXFET짰 Power MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A??

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

HEXFET짰 Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

Power MOSFET(Vdss=30V, Rds(on)=0.007ohm, Id=100A??

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

IRF

N-Channel MOSFET Transistor

文件:338.89 Kbytes Page:2 Pages

ISC

无锡固电

Advanced Process Technology

文件:192.01 Kbytes Page:9 Pages

IRF

Advanced Process Technology

文件:192.01 Kbytes Page:9 Pages

IRF

isc N-Channel MOSFET Transistor

文件:263.11 Kbytes Page:2 Pages

ISC

无锡固电

Advanced Process Technology

文件:295.79 Kbytes Page:10 Pages

IRF

Advanced Process Technology

文件:295.79 Kbytes Page:10 Pages

IRF

T-1 Subminiature Lamps

T-1¾ Wire Lead T-1¾ Miniature Flanged T-1¾ Miniature Grooved T-1¾ Midget Screw T-1¾ Bi-Pin

GILWAY

FEMALE THREADED STANDOFFS

[KEYSTONE] THREADED STANDOFFS

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

high Current Toroid Inductors

[J.W.Miller]

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

LOG114EVM User Guide

文件:571.52 Kbytes Page:21 Pages

TI1

德州仪器

Extra Dome Plugs

文件:151.58 Kbytes Page:1 Pages

HeycoHeyco.

海科

IRL2203产品属性

  • 类型

    描述

  • 型号

    IRL2203

  • 制造商

    IRF

  • 制造商全称

    International Rectifier

  • 功能描述

    Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A)

更新时间:2025-8-9 19:39:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
25+
TO-220
32360
INFINEON/英飞凌全新特价IRL2203NPBF即刻询购立享优惠#长期有货
IR
24+
TO 262
161172
明嘉莱只做原装正品现货
IOR
24+
TO-252
2987
绝对全新原装现货供应!
IR
23+
TO-220
22000
原装现货假一罚十
IR
24+
TO-263
501452
免费送样原盒原包现货一手渠道联系
IR
23+
TO-263
65400
IR(国际整流器)
24+
N/A
15409
原厂可订货,技术支持,直接渠道。可签保供合同
IR
23+
NA
146
专做原装正品,假一罚百!
IR原装
25+23+
TOI-220F
22919
绝对原装正品全新进口深圳现货
IR
23+
TO-220
35890

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