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位置：首页 > IC中文资料第3194页 > IRL2203N

IRL2203N价格

参考价格：￥7.4948

型号：IRL2203NLPBF 品牌：International 备注：这里有IRL2203N多少钱，2026年最近7天走势，今日出价，今日竞价，IRL2203N批发/采购报价，IRL2203N行情走势销售排行榜，IRL2203N报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRL2203N

Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A??

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

IRL2203N

N-Channel MOSFET Transistor

文件：338.89 Kbytes Page：2 Pages

ISC

无锡固电

IRL2203N

30V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

Infineon

英飞凌

IRL2203NL

Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A??

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

IRL2203NLPBF

HEXFET짰 Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

IRL2203NLPBF

Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

IRL2203NPBF

HEXFET짰 Power MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

IRL2203NS

Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A??

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

IRL2203NSPBF

HEXFET짰 Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

IRL2203NSPBF

Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

IRL2203NSTRLPBF

Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

IRL2203NL

Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A⑦)

Infineon

英飞凌

IRL2203NPBF

Advanced Process Technology

文件：192.01 Kbytes Page：9 Pages

IRF

IRL2203NPBF_15

Advanced Process Technology

文件：192.01 Kbytes Page：9 Pages

IRF

IRL2203NS

30V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

Infineon

英飞凌

IRL2203NS

isc N-Channel MOSFET Transistor

文件：263.11 Kbytes Page：2 Pages

ISC

无锡固电

IRL2203NSPBF

Advanced Process Technology

文件：295.79 Kbytes Page：10 Pages

IRF

IRL2203NSPBF_15

Advanced Process Technology

文件：295.79 Kbytes Page：10 Pages

IRF

2203

T-1 Subminiature Lamps

T-1¾ Wire Lead T-1¾ Miniature Flanged T-1¾ Miniature Grooved T-1¾ Midget Screw T-1¾ Bi-Pin

GILWAY

2203

FEMALE THREADED STANDOFFS

[KEYSTONE] THREADED STANDOFFS

ETCList of Unclassifed Manufacturers

未分类制造商

2203

high Current Toroid Inductors

[J.W.Miller]

ETCList of Unclassifed Manufacturers

未分类制造商

2203

LOG114EVM User Guide

文件：571.52 Kbytes Page：21 Pages

TI

德州仪器

2203

Extra Dome Plugs

文件：151.58 Kbytes Page：1 Pages

Heyco

IRL2203N产品属性

  • 类型

    描述

  • 型号

    IRL2203N

  • 功能描述

    MOSFET N-CH 30V 116A TO-220AB

  • RoHS

    否

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • 型

    MOSFET N 通道，金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds（最大）@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A，10V Id 时的

  • Vgs(th)（最大）

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

IRL2203N供应商更多...

更新时间：2026-1-2 19:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市明嘉莱科技有限公司
IRL2203NL
IR
24+
TO 262
161172
明嘉莱只做原装正品现货
询价
深圳市拓亿芯电子有限公司
IRL2203NPBF
IR
25+
TO-220
22000
原装现货假一罚十
询价
深圳市得捷芯城科技有限公司
IRL2203NPBF
IR(国际整流器)
24+
N/A
15409
原厂可订货,技术支持,直接渠道。可签保供合同
询价
深圳市中联芯电子有限公司
IRL2203NPBF
IR
24+
TO-220AB
10000
只做原装欢迎含税交易,假一赔十,放心购买
询价
深圳市高捷芯城科技有限公司
IRL2203NSTRLPBF
Infineon(英飞凌)
24+
D2PAK
8357
支持大陆交货,美金交易。原装现货库存。
询价
中天科工半导体（深圳）有限公司
IRL2203NPBF
INFINEON/英飞凌
25+
TO-220
32360
INFINEON/英飞凌全新特价IRL2203NPBF即刻询购立享优惠#长期有货
询价
深圳市赛尔通科技有限公司
IRL2203NS
IR
23+
TO-263
65400
询价
深圳市卓越微芯电子有限公司
IRL2203NPBF
IR
25+
TO-220
9600
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
深圳市欧立现代科技有限公司
IRL2203NS
IR
24+
TO-263
8150
绝对原装现货,价格低,欢迎询购!
询价
深圳市创新迹电子有限公司
IRL2203NPBF-P
IR
2021+
TO-220
9000
原装现货,随时欢迎询价
询价

IRL2203N芯片相关品牌

IRL2203N规格书下载地址

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IRL2203N数据表相关新闻

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