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IRKD166

STANDARD RECOVERY DIODES

Features ■ High Voltage ■ Electrically Isolated by DBC Ceramic ( Al2O3) ■ 3500 VRMS Isolating Voltage ■ Industrial Standard Package ■ High Surge Capability ■ Glass Passivated Chips ■ Modules uses High Voltage Power diodes in four Basic Configurations ■ Simple Mounting ■ UL E78996 approved

IRF

STANDARD RECOVERY DIODES

Features ■ High Voltage ■ Electrically Isolated by DBC Ceramic ( Al2O3) ■ 3500 VRMS Isolating Voltage ■ Industrial Standard Package ■ High Surge Capability ■ Glass Passivated Chips ■ Modules uses High Voltage Power diodes in four Basic Configurations ■ Simple Mounting ■ UL E78996 approved

IRF

STANDARD RECOVERY DIODES

Features ■ High Voltage ■ Electrically Isolated by DBC Ceramic ( Al2O3) ■ 3500 VRMS Isolating Voltage ■ Industrial Standard Package ■ High Surge Capability ■ Glass Passivated Chips ■ Modules uses High Voltage Power diodes in four Basic Configurations ■ Simple Mounting ■ UL E78996 approved

IRF

STANDARD RECOVERY DIODES

Features ■ High Voltage ■ Electrically Isolated by DBC Ceramic ( Al2O3) ■ 3500 VRMS Isolating Voltage ■ Industrial Standard Package ■ High Surge Capability ■ Glass Passivated Chips ■ Modules uses High Voltage Power diodes in four Basic Configurations ■ Simple Mounting ■ UL E78996 approved

IRF

STANDARD RECOVERY DIODES

Features ■ High Voltage ■ Electrically Isolated by DBC Ceramic ( Al2O3) ■ 3500 VRMS Isolating Voltage ■ Industrial Standard Package ■ High Surge Capability ■ Glass Passivated Chips ■ Modules uses High Voltage Power diodes in four Basic Configurations ■ Simple Mounting ■ UL E78996 approved

IRF

STANDARD RECOVERY DIODES

Features ■ High Voltage ■ Electrically Isolated by DBC Ceramic ( Al2O3) ■ 3500 VRMS Isolating Voltage ■ Industrial Standard Package ■ High Surge Capability ■ Glass Passivated Chips ■ Modules uses High Voltage Power diodes in four Basic Configurations ■ Simple Mounting ■ UL E78996 approved

IRF

STANDARD RECOVERY DIODES

Features ■ High Voltage ■ Electrically Isolated by DBC Ceramic ( Al2O3) ■ 3500 VRMS Isolating Voltage ■ Industrial Standard Package ■ High Surge Capability ■ Glass Passivated Chips ■ Modules uses High Voltage Power diodes in four Basic Configurations ■ Simple Mounting ■ UL E78996 approved

IRF

STANDARD RECOVERY DIODES

Features ■ High Voltage ■ Electrically Isolated by DBC Ceramic ( Al2O3) ■ 3500 VRMS Isolating Voltage ■ Industrial Standard Package ■ High Surge Capability ■ Glass Passivated Chips ■ Modules uses High Voltage Power diodes in four Basic Configurations ■ Simple Mounting ■ UL E78996 approved

IRF

STANDARD RECOVERY DIODES

Features ■ High Voltage ■ Electrically Isolated by DBC Ceramic ( Al2O3) ■ 3500 VRMS Isolating Voltage ■ Industrial Standard Package ■ High Surge Capability ■ Glass Passivated Chips ■ Modules uses High Voltage Power diodes in four Basic Configurations ■ Simple Mounting ■ UL E78996 approved

IRF

STANDARD RECOVERY DIODES

Features ■ High Voltage ■ Electrically Isolated by DBC Ceramic ( Al2O3) ■ 3500 VRMS Isolating Voltage ■ Industrial Standard Package ■ High Surge Capability ■ Glass Passivated Chips ■ Modules uses High Voltage Power diodes in four Basic Configurations ■ Simple Mounting ■ UL E78996 approved

IRF

STANDARD RECOVERY DIODES

Features ■ High Voltage ■ Electrically Isolated by DBC Ceramic ( Al2O3) ■ 3500 VRMS Isolating Voltage ■ Industrial Standard Package ■ High Surge Capability ■ Glass Passivated Chips ■ Modules uses High Voltage Power diodes in four Basic Configurations ■ Simple Mounting ■ UL E78996 approved

IRF

STANDARD RECOVERY DIODES

Features ■ High Voltage ■ Electrically Isolated by DBC Ceramic ( Al2O3) ■ 3500 VRMS Isolating Voltage ■ Industrial Standard Package ■ High Surge Capability ■ Glass Passivated Chips ■ Modules uses High Voltage Power diodes in four Basic Configurations ■ Simple Mounting ■ UL E78996 approved

IRF

STANDARD RECOVERY DIODES

Features ■ High Voltage ■ Electrically Isolated by DBC Ceramic ( Al2O3) ■ 3500 VRMS Isolating Voltage ■ Industrial Standard Package ■ High Surge Capability ■ Glass Passivated Chips ■ Modules uses High Voltage Power diodes in four Basic Configurations ■ Simple Mounting ■ UL E78996 approved

IRF

STANDARD RECOVERY DIODES

Features ■ High Voltage ■ Electrically Isolated by DBC Ceramic ( Al2O3) ■ 3500 VRMS Isolating Voltage ■ Industrial Standard Package ■ High Surge Capability ■ Glass Passivated Chips ■ Modules uses High Voltage Power diodes in four Basic Configurations ■ Simple Mounting ■ UL E78996 approved

IRF

STANDARD RECOVERY DIODES

Features ■ High Voltage ■ Electrically Isolated by DBC Ceramic ( Al2O3) ■ 3500 VRMS Isolating Voltage ■ Industrial Standard Package ■ High Surge Capability ■ Glass Passivated Chips ■ Modules uses High Voltage Power diodes in four Basic Configurations ■ Simple Mounting ■ UL E78996 approved

IRF

STANDARD RECOVERY DIODES

Features ■ High Voltage ■ Electrically Isolated by DBC Ceramic ( Al2O3) ■ 3500 VRMS Isolating Voltage ■ Industrial Standard Package ■ High Surge Capability ■ Glass Passivated Chips ■ Modules uses High Voltage Power diodes in four Basic Configurations ■ Simple Mounting ■ UL E78996 approved

IRF

封装/外壳:INT-A-PAK(3) 包装:散装 描述:DIODE MODULE 800V 165A INT-A-PAK 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

封装/外壳:INT-A-PAK(3) 包装:散装 描述:DIODE MODULE 1.2KV 165A INTAPAK 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

DIODE MODULE 1.2KV 165A INTAPAK

VISHAYVishay Siliconix

威世威世科技公司

DIODE MODULE 1.4KV 165A INTAPAK

VISHAYVishay Siliconix

威世威世科技公司

DIODE MODULE 1.6KV 165A INTAPAK

VISHAYVishay Siliconix

威世威世科技公司

Silicon MOS IC

PANASONIC

松下

MOSFET BROADBAND RF POWER FETs

20 W, 500 MHz MOSFET BROADBAND RF POWER FETs Designed primarily for wideband large–signal output and driver from 30– 500MHz. • Low Crss— 4.5 pF @ VDS= 28 V • MRF166C — Typical Performance at 400 MHz, 28 Vdc Output Power = 20 W Gain = 17 dB Efficiency = 55 • Option

MOTOROLA

摩托罗拉

MOSFET BROADBAND RF POWER FETs

20 W, 500 MHz MOSFET BROADBAND RF POWER FETs Designed primarily for wideband large–signal output and driver from 30– 500MHz. • Low Crss— 4.5 pF @ VDS= 28 V • MRF166C — Typical Performance at 400 MHz, 28 Vdc Output Power = 20 W Gain = 17 dB Efficiency = 55 • Option

MOTOROLA

摩托罗拉

TMOS BROADBAND RF POWER FET

40 W, 500 MHz TMOS BROADBAND RF POWER FET Designed primarily for wideband large–signal output and driver stages to 500 MHz. • Push–Pull Configuration Reduces Even Numbered Harmonics • Typical Performance at 400 MHz, 28 Vdc Output Power = 40 Watts Gain = 13 dB Efficie

MOTOROLA

摩托罗拉

Single Phase Bridge Rectifier 2.0 Amp

Features: • Ideal for Printed Circuit Board • Surge Overload Rating: 50A (Peak)

NTE

IRKD166产品属性

  • 类型

    描述

  • 型号

    IRKD166

  • 制造商

    IRF

  • 制造商全称

    International Rectifier

  • 功能描述

    NEW INT-A-pak Power Modules

更新时间:2026-5-13 19:56:00
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IR
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