MOSFET BROADBAND RF POWER FETs

20 W, 500 MHz MOSFET BROADBAND RF POWER FETs Designed primarily for wideband large–signal output and driver from 30– 500MHz. • Low Crss— 4.5 pF @ VDS= 28 V • MRF166C — Typical Performance at 400 MHz, 28 Vdc Output Power = 20 W Gain = 17 dB Efficiency = 55 • Option

The RF MOSFET Line 20W, 500MHz, 28V

Designed primarily for wideband large–signal output and driver from 30– 500MHz. ·N–Channel Enhancement Mode MOSFET\n·Guaranteed Performance at 500 MHz, 28 Vdc Output Power = 20 W, Gain = 13.5 dB, Efficiency = 50%\n·Replacement for Industry Standards such as MRF136, V2820, BLF244, SD1902, and ST1001\n·100% Tested for Load Mismatch at all Phase Angel with 30:1 VSWR\n·Low ;

封装/外壳：319-07 包装：散装 描述：FET RF 65V 500MHZ 319-07 分立半导体产品 晶体管 - FET，MOSFET - 射频

MOSFET BROADBAND RF POWER FETs

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The RF MOSFET Line 20W, 500MHz, 28V

文件：560.77 Kbytes Page：11 Pages

The RF MOSFET Line 20W, 500MHz, 28V

文件：560.77 Kbytes Page：11 Pages

The RF MOSFET Line

文件：560.77 Kbytes Page：11 Pages

The RF MOSFET Line

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MOSFET BROADBAND RF POWER FETs

20 W, 500 MHz MOSFET BROADBAND RF POWER FETs Designed primarily for wideband large–signal output and driver from 30– 500MHz. • Low Crss— 4.5 pF @ VDS= 28 V • MRF166C — Typical Performance at 400 MHz, 28 Vdc Output Power = 20 W Gain = 17 dB Efficiency = 55 • Option

TMOS BROADBAND RF POWER FET

40 W, 500 MHz TMOS BROADBAND RF POWER FET Designed primarily for wideband large–signal output and driver stages to 500 MHz. • Push–Pull Configuration Reduces Even Numbered Harmonics • Typical Performance at 400 MHz, 28 Vdc Output Power = 40 Watts Gain = 13 dB Efficie

Silicon MOS IC

Single Phase Bridge Rectifier 2.0 Amp

Features: • Ideal for Printed Circuit Board • Surge Overload Rating: 50A (Peak)