MOSFET BROADBAND RF POWER FETs

20 W, 500 MHz MOSFET BROADBAND RF POWER FETs Designed primarily for wideband large–signal output and driver from 30– 500MHz. • Low Crss— 4.5 pF @ VDS= 28 V • MRF166C — Typical Performance at 400 MHz, 28 Vdc Output Power = 20 W Gain = 17 dB Efficiency = 55 • Option

MOSFET BROADBAND RF POWER FETs

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The RF MOSFET Line 20W, 500MHz, 28V

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The RF MOSFET Line 20W, 500MHz, 28V

文件：560.77 Kbytes Page：11 Pages

封装/外壳：319-07 包装：散装 描述：FET RF 65V 500MHZ 319-07 分立半导体产品 晶体管 - FET，MOSFET - 射频

The RF MOSFET Line 20W, 500MHz, 28V

The RF MOSFET Line

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The RF MOSFET Line

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Evaluation Kit

INTRODUCTION This kit contains everything needed for rapid prototyping with the SA310KR 3-phase driver. With a multitude of circuit options, the EK76 offers versatility when in comes to connecting inputs, measuring outputs, and conditioning signals to the specific application environment. High-

Very Low Quiescent Current, 150 mA, LDO Regulator

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Very Low Quiescent Current, 150 mA, LDO Regulator

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HI-3200 Avionics Data

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Extruded aluminum driver housing

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