TMOS BROADBAND RF POWER FET

40 W, 500 MHz TMOS BROADBAND RF POWER FET Designed primarily for wideband large–signal output and driver stages to 500 MHz. • Push–Pull Configuration Reduces Even Numbered Harmonics • Typical Performance at 400 MHz, 28 Vdc Output Power = 40 Watts Gain = 13 dB Efficie

TMOS BROADBAND RF POWER FET

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The RF MOSFET Line 40W, 500MHz, 28V

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The RF MOSFET Line 40W, 500MHz, 28V

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封装/外壳：412-01 包装：托盘 描述：FET RF 2CH 65V 500MHZ 412-01 分立半导体产品 晶体管 - FET，MOSFET - 射频

The RF MOSFET Line

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Evaluation Kit

INTRODUCTION This kit contains everything needed for rapid prototyping with the SA310KR 3-phase driver. With a multitude of circuit options, the EK76 offers versatility when in comes to connecting inputs, measuring outputs, and conditioning signals to the specific application environment. High-

Very Low Quiescent Current, 150 mA, LDO Regulator

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Very Low Quiescent Current, 150 mA, LDO Regulator

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HI-3200 Avionics Data

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Extruded aluminum driver housing

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