Single Phase Bridge Rectifier 2.0 Amp

Features: • Ideal for Printed Circuit Board • Surge Overload Rating: 50A (Peak)

Bridge Rectifiers

Integrated Circuit Audio Preamplifier

Features: • High Open−Loop Voltage Gain: 80dB Typ • High Input Impedance: 200kΩ Typ • Low Noise: 0.9µV Typ (Rg = 2.4kΩ, converted into input voltage)

Integrated Circuit Synchronization Signal Processor For B/W TV and Small-Sized Color TV

Description: This device is a bipolar analog integrated circuit designed for mono−chrome TV and small size color TV. It contains synchronous signal separator, vertical deflection signal generator, vertical power stage, and horizontal defection signal generator in a molded 16 pins dial in−line p

Integrated Circuit TV Hotizontal/Vertical Sync Signal Processor

Description: The NTE1664 is a silicon monolithic integrated circuit in a 22–Lead DIP type package designed for use as a horizontal deflection circuit and vertical deflection circuit for color TV sets. This device contains two synchronization signal separators, a vertical oscillator, vertical sa

Integrated Circuit 2 Channel Amp, 2.3W/Ch (4.7W BTL)

Features: Has Two Channels that can be used for Either Stereo or Bridge Amplifier High Outputs: 2 Channel (2.3W/Ch @ VCC = 9V, RL = 4Ω) Bridge Amp (4.7W @ VCC = 9V, RL = 8Ω) Voltage Gain is Variable by Externally Connected Feedback Resistors: 2 Channel (RNF = 27Ω,

Integrated Circuit TV SoundIF/Detector

Features: • Low Distortion: 0.02 • High Sensitivity: 200µVrms • Excellent AMR: −55dB Typ.

Integrated Circuit TV Hotizontal/Vertical Sync Signal Processor

Integrated circuit. 2 channel amp, 2.3W/Ch (4.7W BTL).

Silicon MOS IC

MOSFET BROADBAND RF POWER FETs

20 W, 500 MHz MOSFET BROADBAND RF POWER FETs Designed primarily for wideband large–signal output and driver from 30– 500MHz. • Low Crss— 4.5 pF @ VDS= 28 V • MRF166C — Typical Performance at 400 MHz, 28 Vdc Output Power = 20 W Gain = 17 dB Efficiency = 55 • Option

MOSFET BROADBAND RF POWER FETs

20 W, 500 MHz MOSFET BROADBAND RF POWER FETs Designed primarily for wideband large–signal output and driver from 30– 500MHz. • Low Crss— 4.5 pF @ VDS= 28 V • MRF166C — Typical Performance at 400 MHz, 28 Vdc Output Power = 20 W Gain = 17 dB Efficiency = 55 • Option

TMOS BROADBAND RF POWER FET

40 W, 500 MHz TMOS BROADBAND RF POWER FET Designed primarily for wideband large–signal output and driver stages to 500 MHz. • Push–Pull Configuration Reduces Even Numbered Harmonics • Typical Performance at 400 MHz, 28 Vdc Output Power = 40 Watts Gain = 13 dB Efficie

Monolithic IGs