型号 功能描述 生产厂家 企业 LOGO 操作

INSULATED GATE BIPOLAR TRANSISTOR

Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low

IRF

INSULATED GATE BIPOLAR TRANSISTOR

Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low

IRF

INSULATED GATE BIPOLAR TRANSISTOR

Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Perfor

IRF

INSULATED GATE BIPOLAR TRANSISTOR

Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Perfor

IRF

INSULATED GATE BIPOLAR TRANSISTOR

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IRF

更新时间:2025-12-31 13:36:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO-263
5240
只做原装假一赔十
IR
24+
原厂封装
2000
原装现货假一罚十
IR
21+
TO-263
10000
原装现货假一罚十
INFINEON/英飞凌
23+/24+
TO-263
9865
专营品牌.原装正品.终端BOM表可配单
IR
23+
TO-263
50000
全新原装正品现货,支持订货
IR
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
IR
24+
N/A
8000
全新原装正品,现货销售
INFINEON/英飞凌
25+
TO-263
32360
INFINEON/英飞凌全新特价IRGS4B60KD1TRRP即刻询购立享优惠#长期有货
IR
24+
NA/
202
优势代理渠道,原装正品,可全系列订货开增值税票
Infineon(英飞凌)
24+
TO-263
1471
原厂订货渠道,支持BOM配单一站式服务

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