型号 功能描述 生产厂家 企业 LOGO 操作
IRGBF30

INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=11A)

Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of

IRF

IRGBF30

INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=11A)

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=11A)

Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of

IRF

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRF

IRGBF30产品属性

  • 类型

    描述

  • 型号

    IRGBF30

  • 制造商

    IRF

  • 制造商全称

    International Rectifier

  • 功能描述

    INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=11A)

更新时间:2025-10-4 15:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
23+
TO
6000
原装正品,支持实单
IR
23+
TO
8000
只做原装现货
IR
23+
TO
7000
IR
22+
TO
6000
十年配单,只做原装
IR
23+
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
IR
23+
TO-220
50000
全新原装正品现货,支持订货
INTERNATIONA
05+
原厂原装
7990
只做全新原装真实现货供应
IR
21+
TO-220
10000
原装现货假一罚十
IR
16+
TO-220
10000
全新原装现货
INTERNATIONAL RECTIFIER
2023+
SMD
3662
安罗世纪电子只做原装正品货

IRGBF30数据表相关新闻