INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A)

Short Circuit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency

INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A)

Short Circuit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A)

Short Circuit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Short Circuit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT

SINGLE-PHASE FULL WAVE BRIDGE 4 AMPERES FOR P.C. BOARD AND HEAT SINK MOUNTING

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