位置：首页 > IC中文资料 > IRG4PF50UD
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
INSULATED GATE BIPOLAR TRANSISTOR VCES = 900V VCE(on) typ. = 2.25V @VGE = 15V, IC = 28A Benefits • Lower switching losses allow more cost-effective operation and hence efficient replacement of larger die MOSFETs up to 100kHz • Of particular benefit in single-ended converters and Power Supplies 150W and higher • | IRF |   | ||
IGBT DESCRIPTION · Low Gate Drive Requirement · High Current Handling Capability · Short Circuit Capability · High Power Density APPLICATIONS · Power Inverters · Motor Drives · UPS,PFC · High Voltage Auxiliaries | ISC 无锡固电 | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 900V VCE(on) typ. = 2.25V @VGE = 15V, IC = 28A Features • Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduct | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR VCES = 900V VCE(on) typ. = 2.25V @VGE = 15V, IC = 28A Benefits • Lower switching losses allow more cost-effective operation and hence efficient replacement of larger die MOSFETs up to 100kHz • Of particular benefit in single-ended converters and Power Supplies 150W and higher • | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 900V VCE(on) typ. = 2.25V @VGE = 15V, IC = 28A Features • Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduct | IRF | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
TO-247 |
924 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
IR |
24+ |
TO 247 |
160989 |
明嘉莱只做原装正品现货 |
|||
INFINEON/英飞凌 |
25+ |
TO-247 |
6741 |
全新原装现货特价销售,欢迎来电查询 |
|||
IR |
2450+ |
TO-247 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
IR |
24+ |
TO-247 |
20540 |
保证进口原装现货假一赔十 |
|||
INFINEON进口 |
22+ |
TO-247 |
8113 |
原装正品现货假一罚十 |
|||
IR |
22+ |
TO-247 |
26550 |
原装正品，实单请联系 |
|||
IR |
23+ |
TO-247 |
65400 |
||||
INFINEON/英飞凌 |
25+ |
TO-247 |
32360 |
INFINEON/英飞凌全新特价IRG4PF50WPBF即刻询购立享优惠#长期有货 |
|||
INFINEON/英飞凌 |
23+/24+ |
TO-247 |
9865 |
原装正品,专业分销IGBT管 |
IRG4PF50UD芯片相关品牌
IRG4PF50UD规格书下载地址
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IRG4PF50UD数据表相关新闻
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属性 参数值 商品目录 IGBT管 集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
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2020-1-12
DdatasheetPDF页码索引
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