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IRG4PC50SPBF价格
参考价格：￥13.7123
型号：IRG4PC50SPBF 品牌：International 备注：这里有IRG4PC50SPBF多少钱，2026年最近7天走势，今日出价，今日竞价，IRG4PC50SPBF批发/采购报价，IRG4PC50SPBF行情走势销售排行榜，IRG4PC50SPBF报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRG4PC50SPBF | INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V VCE(on) typ. = 1.28V @VGE = 15V, IC = 41A Features • Standard: Optimized for minimum saturation voltage and low operating frequencies ( | IRF |   | |
IRG4PC50SPBF | INSULATED GATE BIPOLAR TRANSISTOR 文件：983.75 Kbytes Page：9 Pages | IRF | | |
IRG4PC50SPBF | 封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 600V 70A 200W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | INFINEON 英飞凌 | | |
INSULATED GATE BIPOLAR TRANSISTOR 文件：983.75 Kbytes Page：9 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A) VCES= 600V VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A Features • Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V,Vce(on)typ.=1.84V, @Vge=15V, Ic=30A) Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C,VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generat | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.84V, @Vge=15V, Ic=30A) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features ●Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz, and Short Circuit Rated to 10µs @125°C, VGE= 15V ●Generation 4 IGBT design provides tigh | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A) VCES= 600V VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry stan | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A) VCES = 600V VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-pack | IRF | |
IRG4PC50SPBF产品属性
- 类型
描述
- 型号
IRG4PC50SPBF
- 功能描述
IGBT 晶体管 600V DC-1 KHZ(STD) DISCRETE IGBT
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NA |
25+23+ |
New |
30946 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
IR |
2517+ |
TO-247 |
8850 |
只做原装正品现货或订货假一赔十! |
|||
IR |
24+ |
TO-247-3 |
162 |
||||
Infineon |
23+ |
IGBT |
5864 |
原装原标原盒 给价就出 全网最低 |
|||
IR |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
IR |
25+ |
TO247 |
860000 |
明嘉莱只做原装正品现货 |
|||
IR |
24+ |
TO247 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IR |
22+ |
TO-247 |
20000 |
公司只做原装 品质保障 |
|||
Infineon Technologies |
23+ |
原装 |
7000 |
||||
INFINEON/英飞凌 |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
IRG4PC50SPBF规格书下载地址
IRG4PC50SPBF参数引脚图相关
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- IRG4PC50FPBF
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- IRG4PC50FD-EPBF
- IRG4PC40WPBF
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- IRFZ48Z
- IRFZ48V
- IRFZ48S
- IRFZ48R
- IRFZ48N
- IRFZ48L
- IRFZ48
- IRFZ46Z
- IRFZ46S
- IRFZ46N
- IRFZ46L
- IRFZ46
- IRFZ45
- IRFZ44Z
- IRFZ44V
- IRFZ44S
- IRFZ44R
- IRFZ44N
- IRFZ44L
- IRFZ44E
IRG4PC50SPBF数据表相关新闻
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属性 参数值 商品目录 IGBT管 集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
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DdatasheetPDF页码索引
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