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IRG4PC50SPBF价格

参考价格:¥13.7123

型号:IRG4PC50SPBF 品牌:International 备注:这里有IRG4PC50SPBF多少钱,2026年最近7天走势,今日出价,今日竞价,IRG4PC50SPBF批发/采购报价,IRG4PC50SPBF行情走势销售排行榜,IRG4PC50SPBF报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRG4PC50SPBF

INSULATED GATE BIPOLAR TRANSISTOR

VCES = 600V VCE(on) typ. = 1.28V @VGE = 15V, IC = 41A Features • Standard: Optimized for minimum saturation voltage and low operating frequencies (

IRF

IRG4PC50SPBF

INSULATED GATE BIPOLAR TRANSISTOR

文件:983.75 Kbytes Page:9 Pages

IRF

IRG4PC50SPBF

封装/外壳:TO-247-3 包装:卷带(TR) 描述:IGBT 600V 70A 200W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单

INFINEON

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR

文件:983.75 Kbytes Page:9 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)

VCES= 600V VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A Features • Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V,Vce(on)typ.=1.84V, @Vge=15V, Ic=30A)

Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C,VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generat

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.84V, @Vge=15V, Ic=30A)

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features ●Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz, and Short Circuit Rated to 10µs @125°C, VGE= 15V ●Generation 4 IGBT design provides tigh

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A)

VCES= 600V VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry stan

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A)

VCES = 600V VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-pack

IRF

IRG4PC50SPBF产品属性

  • 类型

    描述

  • 型号

    IRG4PC50SPBF

  • 功能描述

    IGBT 晶体管 600V DC-1 KHZ(STD) DISCRETE IGBT

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2026-8-3 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO247
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IR
25+
TO247
32360
IR全新特价IRG4PC50SPBF即刻询购立享优惠#长期有货
IR
2517+
TO-247
8850
只做原装正品现货或订货假一赔十!
IR
07+/08+
TO-247
892
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Infineon Technologies
22+
TO247AC
9000
原厂渠道,现货配单
Infineon
24+
NA
3302
进口原装正品优势供应
INFINEON/英飞凌
2022+
25
6600
只做原装,假一罚十,长期供货。
INF
26+
SMD
24
全新正品现货供应特价库存
NA
25+23+
New
30946
绝对原装正品现货,全新深圳原装进口现货
Internation.Rectifer
25+
66880
原装正品,欢迎询价

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