ISSULATED GATE BIPOLAR TRANSISTOR

Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT

INSULATED GATE BIPOLAR TRANSISTOR

文件：283.94 Kbytes Page：8 Pages

封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 40A 160W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

INSULATED GATE BIPOLAR TRANSISTOR

文件：283.94 Kbytes Page：8 Pages

INSULATED GATE BIPOLAR TRANSISOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)

Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package Benefits • Genera

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes Page：35 Pages

INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A)

Features • Standard: optimized for minimum saturation voltage and low operating frequencies (

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)

Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package Benefits • Gener

INSULATED GATE BIPOLAR TRANSISTOR

文件：167.69 Kbytes Page：8 Pages