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IRG4BC40WPBF价格
参考价格：￥5.1488
型号：IRG4BC40WPBF 品牌：INTERNATIONAL 备注：这里有IRG4BC40WPBF多少钱，2026年最近7天走势，今日出价，今日竞价，IRG4BC40WPBF批发/采购报价，IRG4BC40WPBF行情走势销售排行榜，IRG4BC40WPBF报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRG4BC40WPBF | ISSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT | IRF |   | |
IRG4BC40WPBF | INSULATED GATE BIPOLAR TRANSISTOR 文件：283.94 Kbytes Page：8 Pages | IRF | | |
IRG4BC40WPBF | 封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 40A 160W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | INFINEON 英飞凌 | | |
INSULATED GATE BIPOLAR TRANSISTOR 文件：283.94 Kbytes Page：8 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A) Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package Benefits • Genera | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A) Features • Short Circuit Rated UltraFast: optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3 • Industry standard TO-247AC package Benefits • Generation 4 IGB | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A) Features • Standard: optimized for minimum saturation voltage and low operating frequencies ( | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A) Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package Benefits • Gener | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A) Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT | IRF | |
IRG4BC40WPBF产品属性
- 类型
描述
- 型号
IRG4BC40WPBF
- 功能描述
IGBT 晶体管 600V Warp 60-150kHz
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
INFINEON/IR |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
INFINEON/英飞凌 |
18+ |
TO-220 |
1997 |
||||
INFINEON/IR |
21+ |
NA |
12820 |
只做原装,质量保证 |
|||
IR |
24+ |
TO-220-3 |
25 |
||||
Infineon |
23+ |
IGBT |
5864 |
原装原标原盒 给价就出 全网最低 |
|||
IR |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
INFINEON/英飞凌 |
25+ |
TO-2 |
860000 |
明嘉莱只做原装正品现货 |
|||
IR |
23+ |
7000 |
|||||
IR |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
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IRG4BC40WPBF规格书下载地址
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DdatasheetPDF页码索引
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