IRG4BC40S价格
参考价格：￥5.1488
型号：IRG4BC40SPBF 品牌：International 备注：这里有IRG4BC40S多少钱，2026年最近7天走势，今日出价，今日竞价，IRG4BC40S批发/采购报价，IRG4BC40S行情走势销售排行榜，IRG4BC40S报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRG4BC40S | INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A) Features • Standard: optimized for minimum saturation voltage and low operating frequencies ( | IRF |   | |
IRG4BC40S | Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF | | |
IRG4BC40S | 600V DC-1 kHz（标准）分立 IGBT，采用 TO-220AB 封装 | INFINEON 英飞凌 | | |
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Standard: optimized for minimum saturation voltage and low operating frequencies ( | IRF | | ||
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：306.65 Kbytes Page：8 Pages | IRF | | ||
封装/外壳：TO-220-3 包装：卷带（TR） 描述：IGBT 600V 60A 160W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | INFINEON 英飞凌 | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：306.65 Kbytes Page：8 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A) Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package Benefits • Genera | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A) Features • Short Circuit Rated UltraFast: optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3 • Industry standard TO-247AC package Benefits • Generation 4 IGB | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A) Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package Benefits • Gener | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A) Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT | IRF | |
IRG4BC40S产品属性
- 类型
描述
- Technology ：
IGBT Gen 4
- Switching Frequency min max：
8.0kHz 30.0kHz
- Package ：
TO-220
- Voltage Class max：
600.0V
- IC(@100°) max：
31.0A
- IC(@25°) max：
60.0A
- ICpuls max：
120.0A
- Ptot max：
160.0W
- VCE(sat) ：
1.32V
- Eon ：
0.45mJ
- Eoff(Hard Switching) ：
6.5mJ
- td(on) ：
23.0ns
- tr ：
21.0ns
- td(off) ：
1000.0ns
- tf ：
940.0ns
- QGate ：
100.0nC
- Ets (max)：
6.95mJ (9.9mJ)
- Switching Frequency ：
Gen 4 8-30 kHz
- VCE max：
600.0V
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2025+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
Infineon |
24+ |
NA |
3554 |
进口原装正品优势供应 |
|||
VISHAY |
26+ |
NA |
19854 |
专业电子元器件供应链正迈科技特价代理特价，原装元器件供应，支持开发样品 |
|||
IR |
26+ |
TO-220 |
35890 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
IR |
25+ |
TO-220 |
6000 |
全新原装现货,下单前确认 |
|||
IR |
25+ |
TO220 |
880000 |
明嘉莱只做原装正品现货 |
|||
IOR |
25+23+ |
TO220 |
17915 |
绝对原装正品全新进口深圳现货 |
|||
IR |
25+ |
TO220 |
3000 |
全新原装、诚信经营、公司现货销售 |
|||
IR |
24+ |
DIP |
3000 |
||||
IR |
22+ |
TO-263 |
20000 |
公司只做原装 品质保障 |
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IRG4BC40S规格书下载地址
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DdatasheetPDF页码索引
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