INSULATEDGATEBIPOLARTRANSISTOR

Features •DesignedexpresslyforSwitch-ModePower SupplyandPFC(powerfactorcorrection) applications •Industry-benchmarkswitchinglossesimprove efficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBT

INSULATEDGATEBIPOLARTRANSISOR(Vces=600V,Vce(on)typ.=1.50V,@Vge=15V,Ic=27A)

Features •Fast:optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IndustrystandardTO-220ABpackage Benefits •Genera

FitRate/EquivalentDeviceHours

文件：98.39 Kbytes Page：35 Pages

INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT(Vces=600V,Vce(on)typ.=1.32V,@Vge=15V,Ic=31A)

Features •Standard:optimizedforminimumsaturation voltageandlowoperatingfrequencies(

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.72V,@Vge=15V,Ic=20A)

Features •UltraFast:optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IndustrystandardTO-220ABpackage Benefits •Gener

INSULATEDGATEBIPOLARTRANSISTOR

文件：167.69 Kbytes Page：8 Pages