型号 功能描述 生产厂家&企业 LOGO 操作

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.88V,@Vge=15V,Ic=8.6A)

Features •Rugged:10µsecshortcircuitcapableatVGS=15V •LowVCE(on)for4to10kHzapplications •IGBTco-packagedwithultra-soft-recoveryanti-paralleldiodes •IndustrystandardTO-220ABpackage Benefits •BestValueforApplianceandIndustrialapplications •Offershighesteffic

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •Rugged:10µsecshortcircuitcapableatVGS=15V •LowVCE(on)for4to10kHzapplications •IGBTco-packagedwithultra-soft-recoveryanti-paralleldiodes •IndustrystandardTO-220ABpackage •Lead-Free Benefits •BestValueforApplianceandIndustrialapplications •Offers

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.02V,@Vge=15V,Ic=7.8A)

Features •UltraFast:Optimizedforhighfrequenciesfrom10to30kHzinhardswitching •IGBTCo-packagedwithultra-soft-recoveryantiparalleldiode •IndustrystandardTO-220ABpackage Benefits •BestValueforApplianceandIndustrialApplications •HighnoiseimmunePositiveOnlygated

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.02V,@Vge=15V,Ic=7.8A)

UltraFastCoPackIGBT Features •UltraFast:Optimizedforhighfrequenciesfrom10to 30kHzinhardswitching •IGBTCo-packagedwithultra-soft-recovery antiparalleldiode •IndustrystandardD2Pak&TO-262packages Benefits •BestValueforApplianceandIndustrialApplications

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIOD

UltraFastCoPackIGBT Features •UltraFast:Optimizedforhighfrequenciesfrom10to 30kHzinhardswitching •IGBTCo-packagedwithultra-soft-recovery antiparalleldiode •IndustrystandardD2Pak&TO-262packages •Lead-Free Benefits •BestValueforApplianceandIndustrial

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4BC15UDSTRLP产品属性

  • 类型

    描述

  • 型号

    IRG4BC15UDSTRLP

  • 功能描述

    IGBT 模块 600V 7.800A

  • RoHS

  • 制造商

    Infineon Technologies

  • 产品

    IGBT Silicon Modules

  • 配置

    Dual 集电极—发射极最大电压

  • VCEO

    600 V

  • 集电极—射极饱和电压

    1.95 V 在25

  • C的连续集电极电流

    230 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    445 W

  • 最大工作温度

    + 125 C

  • 封装/箱体

    34MM

更新时间:2024-5-17 18:01:02
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
23+
TO-220AB
8600
全新原装现货
IR/International Rectifier/国
21+
TO-220
266
优势代理渠道,原装正品,可全系列订货开增值税票
IR
2048+
TO-220
9851
只做原装正品现货!或订货假一赔十!
IR
23+
TO-220
90000
只做原厂渠道价格优势可提供技术支持
IR/VISHAY
23+
TO-220AB
6000
原装正品,支持实单
IR
23+
NA/
328
优势代理渠道,原装正品,可全系列订货开增值税票
IR
08+(pbfree)
TO-220AB
8866
IR
22+
TO-220
89678
IR
1922+
TO-220
231
一级代理,专注军工、汽车、医疗、工业、新能源、电力
IR
TO-220
265209
假一罚十原包原标签常备现货!

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