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IRG4BC15UD价格
参考价格:¥7.5676
型号:IRG4BC15UD-LPBF 品牌:IR 备注:这里有IRG4BC15UD多少钱,2025年最近7天走势,今日出价,今日竞价,IRG4BC15UD批发/采购报价,IRG4BC15UD行情走势销售排行榜,IRG4BC15UD报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
IRG4BC15UD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.02V, @Vge=15V, Ic=7.8A) Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard TO-220AB package Benefits • Best Value for Appliance and Industrial Applications • High noise immune Positive Only gate d | IRF International Rectifier | ||
IRG4BC15UD | 封装/外壳:TO-220-3 包装:管件 描述:IGBT 600V 14A 49W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.02V, @Vge=15V, Ic=7.8A) UltraFast CoPack IGBT Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard D2Pak & TO-262 packages Benefits • Best Value for Appliance and Industrial Applications | IRF International Rectifier | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIOD UltraFast CoPack IGBT Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard D2Pak & TO-262 packages • Lead-Free Benefits • Best Value for Appliance and Industrial | IRF International Rectifier | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIOD UltraFast CoPack IGBT Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard D2Pak & TO-262 packages • Lead-Free Benefits • Best Value for Appliance and Industrial | IRF International Rectifier | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard TO-220AB package • Lead-Free Benefits • Best Value for Appliance and Industrial Applications • High noise immune | IRF International Rectifier | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIOD UltraFast CoPack IGBT Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard D2Pak & TO-262 packages • Lead-Free Benefits • Best Value for Appliance and Industrial | IRF International Rectifier | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.02V, @Vge=15V, Ic=7.8A) UltraFast CoPack IGBT Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard D2Pak & TO-262 packages Benefits • Best Value for Appliance and Industrial Applications | IRF International Rectifier | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIOD UltraFast CoPack IGBT Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard D2Pak & TO-262 packages • Lead-Free Benefits • Best Value for Appliance and Industrial | IRF International Rectifier | |||
封装/外壳:TO-262-3,长引线,I²Pak,TO-262AA 包装:管件 描述:IGBT 600V 14A 49W TO262 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件:272.8 Kbytes Page:11 Pages | IRF International Rectifier | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件:272.8 Kbytes Page:11 Pages | IRF International Rectifier | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件:324.38 Kbytes Page:13 Pages | IRF International Rectifier | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件:324.38 Kbytes Page:13 Pages | IRF International Rectifier | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.88V, @Vge=15V, Ic=8.6A) Features • Rugged: 10µsec short circuit capable at VGS = 15V • Low VCE(on) for 4 to 10kHz applications • IGBT co-packaged with ultra-soft-recovery anti-parallel diodes • Industry standard TO-220AB package Benefits • Best Value for Appliance and Industrial applications • Offers highest effic | IRF International Rectifier | |||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Rugged: 10µsec short circuit capable at VGS = 15V • Low VCE(on) for 4 to 10kHz applications • IGBT co-packaged with ultra-soft-recovery anti-parallel diodes • Industry standard TO-220AB package • Lead-Free Benefits • Best Value for Appliance and Industrial applications • Offers | IRF International Rectifier |
IRG4BC15UD产品属性
- 类型
描述
- 型号
IRG4BC15UD
- 功能描述
DIODE IGBT 600V 14A TO-220AB
- RoHS
否
- 类别
分离式半导体产品 >> IGBT - 单路
- 系列
-
- 标准包装
30
- 系列
GenX3™ IGBT
- 类型
PT 电压 -
- 集电极发射极击穿(最大)
1200V Vge,
- Ic时的最大Vce(开)
3V @ 15V,100A 电流 -
- 集电极(Ic)(最大)
200A 功率 -
- 最大
830W
- 输入类型
标准
- 安装类型
通孔
- 封装/外壳
TO-247-3
- 供应商设备封装
PLUS247?-3
- 包装
管件
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
2025+ |
TO-263 |
32560 |
原装优势绝对有货 |
|||
IR |
21+ |
TO-220 |
10000 |
原装现货假一罚十 |
|||
IR |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
Infineon Technologies |
22+ |
TO220AB |
9000 |
原厂渠道,现货配单 |
|||
IR |
2021+ |
TO-263 |
9000 |
原装现货,随时欢迎询价 |
|||
IR |
1922+ |
TO-220 |
231 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Infineon Technologies |
25+ |
TO-220-3 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
IR |
05+ |
原厂原装 |
2801 |
只做全新原装真实现货供应 |
|||
IR |
2015+ |
TO-220AB |
12500 |
全新原装,现货库存长期供应 |
|||
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
IRG4BC15UD规格书下载地址
IRG4BC15UD参数引脚图相关
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IRG4BC15UD数据表相关新闻
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属性 参数值 商品目录 IGBT管 集电极电流(Ic)(最大值) 55A 集射极击穿电压(最大值) 600V 类型 - 不同 Vge,Ic 时的 Vce(on) 2.3V @ 15V,27A 栅极阈值电压-VGE(th) 6V @ 250uA
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DdatasheetPDF页码索引
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