IRG4BC15UD价格

参考价格:¥7.5676

型号:IRG4BC15UD-LPBF 品牌:IR 备注:这里有IRG4BC15UD多少钱,2025年最近7天走势,今日出价,今日竞价,IRG4BC15UD批发/采购报价,IRG4BC15UD行情走势销售排行榜,IRG4BC15UD报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRG4BC15UD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.02V, @Vge=15V, Ic=7.8A)

Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard TO-220AB package Benefits • Best Value for Appliance and Industrial Applications • High noise immune Positive Only gate d

IRF

IRG4BC15UD

封装/外壳:TO-220-3 包装:管件 描述:IGBT 600V 14A 49W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Infineon

英飞凌

IRG4BC15UD

600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB package

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.02V, @Vge=15V, Ic=7.8A)

UltraFast CoPack IGBT Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard D2Pak & TO-262 packages Benefits • Best Value for Appliance and Industrial Applications

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIOD

UltraFast CoPack IGBT Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard D2Pak & TO-262 packages • Lead-Free Benefits • Best Value for Appliance and Industrial

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIOD

UltraFast CoPack IGBT Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard D2Pak & TO-262 packages • Lead-Free Benefits • Best Value for Appliance and Industrial

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard TO-220AB package • Lead-Free Benefits • Best Value for Appliance and Industrial Applications • High noise immune

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIOD

UltraFast CoPack IGBT Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard D2Pak & TO-262 packages • Lead-Free Benefits • Best Value for Appliance and Industrial

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.02V, @Vge=15V, Ic=7.8A)

UltraFast CoPack IGBT Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard D2Pak & TO-262 packages Benefits • Best Value for Appliance and Industrial Applications

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIOD

UltraFast CoPack IGBT Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard D2Pak & TO-262 packages • Lead-Free Benefits • Best Value for Appliance and Industrial

IRF

600V UltraFast 10-30 kHz Copack IGBT in a TO-262 package

Infineon

英飞凌

封装/外壳:TO-262-3,长引线,I²Pak,TO-262AA 包装:管件 描述:IGBT 600V 14A 49W TO262 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:272.8 Kbytes Page:11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:272.8 Kbytes Page:11 Pages

IRF

600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak package

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:324.38 Kbytes Page:13 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:324.38 Kbytes Page:13 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.88V, @Vge=15V, Ic=8.6A)

Features • Rugged: 10µsec short circuit capable at VGS = 15V • Low VCE(on) for 4 to 10kHz applications • IGBT co-packaged with ultra-soft-recovery anti-parallel diodes • Industry standard TO-220AB package Benefits • Best Value for Appliance and Industrial applications • Offers highest effic

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Rugged: 10µsec short circuit capable at VGS = 15V • Low VCE(on) for 4 to 10kHz applications • IGBT co-packaged with ultra-soft-recovery anti-parallel diodes • Industry standard TO-220AB package • Lead-Free Benefits • Best Value for Appliance and Industrial applications • Offers

IRF

IRG4BC15UD产品属性

  • 类型

    描述

  • 型号

    IRG4BC15UD

  • 功能描述

    DIODE IGBT 600V 14A TO-220AB

  • RoHS

  • 类别

    分离式半导体产品 >> IGBT - 单路

  • 系列

    -

  • 标准包装

    30

  • 系列

    GenX3™ IGBT

  • 类型

    PT 电压 -

  • 集电极发射极击穿(最大)

    1200V Vge,

  • Ic时的最大Vce(开)

    3V @ 15V,100A 电流 -

  • 集电极(Ic)(最大)

    200A 功率 -

  • 最大

    830W

  • 输入类型

    标准

  • 安装类型

    通孔

  • 封装/外壳

    TO-247-3

  • 供应商设备封装

    PLUS247?-3

  • 包装

    管件

更新时间:2025-10-4 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
NA/
328
优势代理渠道,原装正品,可全系列订货开增值税票
IR
24+
TO-220AB
8866
IR
2025+
TO-263
32560
原装优势绝对有货
IR/VISHAY
23+
TO-220AB
6000
原装正品,支持实单
Infineon Technologies
23+
原装
7000
IR
1922+
TO-220
231
一级代理,专注军工、汽车、医疗、工业、新能源、电力
IR
2021+
TO-263
9000
原装现货,随时欢迎询价
IR
24+
原厂封装
54
原装现货假一罚十
IR
23+
TO-220
50000
全新原装正品现货,支持订货
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务

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