INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.88V, @Vge=15V, Ic=8.6A)

Features • Rugged: 10µsec short circuit capable at VGS = 15V • Low VCE(on) for 4 to 10kHz applications • IGBT co-packaged with ultra-soft-recovery anti-parallel diodes • Industry standard TO-220AB package Benefits • Best Value for Appliance and Industrial applications • Offers highest effic

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Rugged: 10µsec short circuit capable at VGS = 15V • Low VCE(on) for 4 to 10kHz applications • IGBT co-packaged with ultra-soft-recovery anti-parallel diodes • Industry standard TO-220AB package • Lead-Free Benefits • Best Value for Appliance and Industrial applications • Offers

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.02V, @Vge=15V, Ic=7.8A)

Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard TO-220AB package Benefits • Best Value for Appliance and Industrial Applications • High noise immune Positive Only gate d

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.02V, @Vge=15V, Ic=7.8A)

UltraFast CoPack IGBT Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard D2Pak & TO-262 packages Benefits • Best Value for Appliance and Industrial Applications

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIOD

UltraFast CoPack IGBT Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard D2Pak & TO-262 packages • Lead-Free Benefits • Best Value for Appliance and Industrial