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IRG4BC15UDPBF价格
参考价格：￥7.4220
型号：IRG4BC15UDPBF 品牌：International 备注：这里有IRG4BC15UDPBF多少钱，2025年最近7天走势，今日出价，今日竞价，IRG4BC15UDPBF批发/采购报价，IRG4BC15UDPBF行情走势销售排行榜，IRG4BC15UDPBF报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRG4BC15UDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard TO-220AB package • Lead-Free Benefits • Best Value for Appliance and Industrial Applications • High noise immune | IRF International Rectifier |  |   |
IRG4BC15UDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：272.8 Kbytes Page：11 Pages | IRF International Rectifier | | |
IRG4BC15UDPBF | 封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 14A 49W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：272.8 Kbytes Page：11 Pages | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.88V, @Vge=15V, Ic=8.6A) Features • Rugged: 10µsec short circuit capable at VGS = 15V • Low VCE(on) for 4 to 10kHz applications • IGBT co-packaged with ultra-soft-recovery anti-parallel diodes • Industry standard TO-220AB package Benefits • Best Value for Appliance and Industrial applications • Offers highest effic | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Rugged: 10µsec short circuit capable at VGS = 15V • Low VCE(on) for 4 to 10kHz applications • IGBT co-packaged with ultra-soft-recovery anti-parallel diodes • Industry standard TO-220AB package • Lead-Free Benefits • Best Value for Appliance and Industrial applications • Offers | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.02V, @Vge=15V, Ic=7.8A) Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard TO-220AB package Benefits • Best Value for Appliance and Industrial Applications • High noise immune Positive Only gate d | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.02V, @Vge=15V, Ic=7.8A) UltraFast CoPack IGBT Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard D2Pak & TO-262 packages Benefits • Best Value for Appliance and Industrial Applications | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIOD UltraFast CoPack IGBT Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard D2Pak & TO-262 packages • Lead-Free Benefits • Best Value for Appliance and Industrial | IRF International Rectifier | | |
IRG4BC15UDPBF产品属性
- 类型
描述
- 型号
IRG4BC15UDPBF
- 功能描述
IGBT 晶体管 600V UltraFast 8-60kHz
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
D2-PAK |
7300 |
专注配单,只做原装进口现货 |
|||
IR |
22+ |
SOT263 |
8000 |
原装正品支持实单 |
|||
IR |
SOT-263 |
6288 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
IR |
24+ |
TO-220-3 |
78 |
||||
ir |
24+ |
N/A |
6980 |
原装现货,可开13%税票 |
|||
IR |
23+ |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
Infineon Technologies |
22+ |
TO220AB |
9000 |
原厂渠道,现货配单 |
|||
IR |
24+ |
NA/ |
96419 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
05+ |
原厂原装 |
50051 |
只做全新原装真实现货供应 |
|||
INFINEON |
1714 |
con |
10 |
现货常备产品原装可到京北通宇商城查价格 |
IRG4BC15UDPBF芯片相关品牌
IRG4BC15UDPBF规格书下载地址
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属性 参数值 商品目录 IGBT管 集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
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DdatasheetPDF页码索引
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