N-channel enhancement mode TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode powe

Power MOSFET (Vdss=55V, Rds(on)=0.07ohm, Id=17A)

Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are w

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional

Advanced Process Technology

Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. ● Advanced Process T

HEXFET Power MOSFET

Description Fifth Generation HEXFET ® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device that HEXFET power MOSFETs are well know

Advanced Process Technology

Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known

N-channel enhancement mode TrenchMOS™ transistor

采用 TO-220 封装的 55V 单 N 沟道功率 MOSFET

Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=17A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

Power MOSFET

Power MOSFET VDSS =55V, RDS(on) = 0.07 mohm, ID = 17 A

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

isc N-Channel MOSFET Transistor

• FEATURES • With TO-262(DPAK) packaging • Surface mount • High speed switching • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operationz • APPLICATIONS • Switching applications

HEXFET Power MOSFET

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Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=17A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

Power MOSFET

Power MOSFET VDSS =55V, RDS(on) = 0.07 mohm, ID = 17 A

N-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Logic-Level Gate Drive • Fast Switching • Compliant to RoHS Directive 2002/95/EC

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

isc N-Channel MOSFET Transistor

• FEATURES • With TO-263(D2PAK) packaging • Surface mount • High speed switching • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operationz • APPLICATIONS • Switching applications

Power MOSFET VDSS =55V, RDS(on) = 0.07 mohm, ID = 17 A

Advanced Process Technology

文件：169.9 Kbytes Page：11 Pages

ADVANCED PROCESS TECHNOLOGY

文件：247.79 Kbytes Page：9 Pages

ADVANCED PROCESS TECHNOLOGY

文件：247.79 Kbytes Page：9 Pages

Advanced Process Technology

文件：169.9 Kbytes Page：11 Pages

Advanced Process Technology

文件：680.17 Kbytes Page：11 Pages

Advanced Process Technology

文件：680.17 Kbytes Page：11 Pages

Advanced Process Technology

文件：169.9 Kbytes Page：11 Pages