IRFZ24N价格

参考价格:¥8.2276

型号:IRFZ24NHR 品牌:International Rectifier 备注:这里有IRFZ24N多少钱,2024年最近7天走势,今日出价,今日竞价,IRFZ24N批发/采购报价,IRFZ24N行情走势销售排行榜,IRFZ24N报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRFZ24N

N-channel enhancement mode TrenchMOS transistor

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseinswitchedmodepowe

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
IRFZ24N

Power MOSFET (Vdss=55V, Rds(on)=0.07ohm, Id=17A)

Description FifthGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarew

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRFZ24N

isc N-Channel MOSFET Transistor

DESCRIPTION •Designedforlowvoltage,highspeedswitchingapplicationsin powersupplies,convertersandpowermotorcontrols,these devicesareparticularlywellsuitedforbridgecircuitswhere diodespeedandcommutatingsafeoperatingareasarecritical andofferadditional

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRFZ24N

Advanced Process Technology

Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. ●AdvancedProcessT

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRFZ24N

HEXFET Power MOSFET

Description FifthGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicethatHEXFETpowerMOSFETsarewellknow

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

ARTSCHIP

Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=17A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Power MOSFET

PowerMOSFETVDSS=55V,RDS(on)=0.07mohm,ID=17A

TEL

TRANSYS Electronics Limited

TEL

HEXFET Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

isc N-Channel MOSFET Transistor

•FEATURES •WithTO-262(DPAK)packaging •Surfacemount •Highspeedswitching •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperationz •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

HEXFET Power MOSFET

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=17A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Power MOSFET

PowerMOSFETVDSS=55V,RDS(on)=0.07mohm,ID=17A

TEL

TRANSYS Electronics Limited

TEL

N-Channel 60 V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •SurfaceMount •AvailableinTapeandReel •DynamicdV/dtRating •Logic-LevelGateDrive •FastSwitching •ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

HEXFET Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

isc N-Channel MOSFET Transistor

•FEATURES •WithTO-263(D2PAK)packaging •Surfacemount •Highspeedswitching •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperationz •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

Advanced Process Technology

文件:169.9 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

ADVANCED PROCESS TECHNOLOGY

文件:247.79 Kbytes Page:9 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

ADVANCED PROCESS TECHNOLOGY

文件:247.79 Kbytes Page:9 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Advanced Process Technology

文件:169.9 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Advanced Process Technology

文件:680.17 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Advanced Process Technology

文件:680.17 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Advanced Process Technology

文件:169.9 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRFZ24N产品属性

  • 类型

    描述

  • 型号

    IRFZ24N

  • 制造商

    IRF

  • 制造商全称

    International Rectifier

  • 功能描述

    Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=17A)

更新时间:2024-5-24 17:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
21+
TO-220AB
4550
全新原装现货
VBsemi
21+
TO263
10065
一级代理,专注军工、汽车、医疗、工业、新能源、电力
IOR
22+
TO-220
2987
绝对全新原装现货供应!
IR
23+
NA
156
专做原装正品,假一罚百!
Infineon
2023
6000
公司原装现货/支持实单
IR
23+
TO-220
20540
保证进口原装现货假一赔十
Infineon Technologies
21+
TO2633 D2Pak (2 Leads + Tab) T
13880
公司只售原装,支持实单
IR
2023+
TO-220
6000
原装正品现货、支持第三方检验、终端BOM表可配单提供
IR
21+
TO-220
15000
全新原装现货,假一赔十
IR
TO-263
6000
原装现货,长期供应,终端可账期

IRFZ24N芯片相关品牌

  • AMPHENOL
  • CK-COMPONENTS
  • DDK
  • GLENAIR
  • MACOM
  • Mitsubishi
  • MOLEX6
  • Panasonic
  • POWERDYNAMICS
  • RHOMBUS-IND
  • TELEDYNE
  • YAMAICHI

IRFZ24N数据表相关新闻