Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=17A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

Power MOSFET

Power MOSFET VDSS =55V, RDS(on) = 0.07 mohm, ID = 17 A

N-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Logic-Level Gate Drive • Fast Switching • Compliant to RoHS Directive 2002/95/EC

Advanced Process Technology

文件：169.9 Kbytes Page：11 Pages

55V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

isc N-Channel MOSFET Transistor

• FEATURES • With TO-263(D2PAK) packaging • Surface mount • High speed switching • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operationz • APPLICATIONS • Switching applications

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Advanced Process Technology

文件：680.17 Kbytes Page：11 Pages

Advanced Process Technology

文件：680.17 Kbytes Page：11 Pages

Advanced Process Technology

文件：169.9 Kbytes Page：11 Pages