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位置：首页 > IC中文资料第992页 > IRFR9310

IRFR9310价格

参考价格：￥2.3285

型号：IRFR9310PBF 品牌：Vishay 备注：这里有IRFR9310多少钱，2025年最近7天走势，今日出价，今日竞价，IRFR9310批发/采购报价，IRFR9310行情走势销售排行榜，IRFR9310报价。

型号	功能描述	生产厂家企业	LOGO
IRFR9310	Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extre	VishayVishay Siliconix 威世威世科技公司	Vishay
IRFR9310	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre	KERSEMI	KERSEMI
IRFR9310	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre	KERSEMI	KERSEMI
IRFR9310	Power MOSFET FEATURES • Advanced process technology • Fully avalanche rated • Surface-mount (IRFR9310, SiHFR9310) • Straight lead (IRFU9310, SiHFU9310) • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generat	VishayVishay Siliconix 威世威世科技公司	Vishay
IRFR9310	Power MOSFET 文件：3.34757 Mbytes Page：7 Pages	KERSEMI	KERSEMI
IRFR9310	Power MOSFET 文件：247.16 Kbytes Page：11 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
IRFR9310	Power MOSFET(Vdss=-400V, Rds(on)=7.0ohm, Id=-1.8A) 文件：116.78 Kbytes Page：10 Pages	IRF	IRF
IRFR9310	Power MOSFET	VishayVishay Siliconix 威世威世科技公司	Vishay
IRFR9310_V01	Power MOSFET FEATURES • Advanced process technology • Fully avalanche rated • Surface-mount (IRFR9310, SiHFR9310) • Straight lead (IRFU9310, SiHFU9310) • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generat	VishayVishay Siliconix 威世威世科技公司	Vishay
IRFR9310PBF	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre	KERSEMI	KERSEMI
IRFR9310PBF	HEXFET POWER MOSFET Description Third generation Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the desig	IRF	IRF
IRFR9310PBF	Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extre	VishayVishay Siliconix 威世威世科技公司	Vishay
IRFR9310TR	Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extre	VishayVishay Siliconix 威世威世科技公司	Vishay
IRFR9310TRA	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre	KERSEMI	KERSEMI
IRFR9310TRL	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre	KERSEMI	KERSEMI
IRFR9310TRL	Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extre	VishayVishay Siliconix 威世威世科技公司	Vishay
IRFR9310TRLA	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre	KERSEMI	KERSEMI
IRFR9310TRLPBF	Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extre	VishayVishay Siliconix 威世威世科技公司	Vishay
IRFR9310TRLPBFA	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre	KERSEMI	KERSEMI
IRFR9310TRPBF	Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extre	VishayVishay Siliconix 威世威世科技公司	Vishay
IRFR9310TRPBFA	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre	KERSEMI	KERSEMI
IRFR9310TRRPBF	Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extre	VishayVishay Siliconix 威世威世科技公司	Vishay
IRFR9310TRRPBFA	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre	KERSEMI	KERSEMI
IRFR9310_17	Power MOSFET 文件：247.16 Kbytes Page：11 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
IRFR9310PBF	Power MOSFET 文件：267.35 Kbytes Page：13 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
IRFR9310PBF	Power MOSFET 文件：3.34757 Mbytes Page：7 Pages	KERSEMI	KERSEMI
IRFR9310TR	Power MOSFET 文件：3.34757 Mbytes Page：7 Pages	KERSEMI	KERSEMI
IRFR9310TRL	Power MOSFET 文件：3.34757 Mbytes Page：7 Pages	KERSEMI	KERSEMI
IRFR9310TRL	Power MOSFET 文件：3.34605 Mbytes Page：7 Pages	KERSEMI	KERSEMI
IRFR9310TRL_15	Power MOSFET 文件：3.34605 Mbytes Page：7 Pages	LUCKY-LIGHT	LUCKY-LIGHT
IRFR9310TRLPBF	Power MOSFET 文件：3.34757 Mbytes Page：7 Pages	KERSEMI	KERSEMI
IRFR9310TRLPBFA	Power MOSFET 文件：267.35 Kbytes Page：13 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
IRFR9310TRLPBF-BE3	Power MOSFET 文件：267.35 Kbytes Page：13 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
IRFR9310TRPBF	Power MOSFET 文件：3.34757 Mbytes Page：7 Pages	KERSEMI	KERSEMI
IRFR9310TRPBFA	Power MOSFET 文件：267.35 Kbytes Page：13 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
IRFR9310TRR	Power MOSFET 文件：3.34757 Mbytes Page：7 Pages	KERSEMI	KERSEMI
IRFR9310TRRPBF	Power MOSFET 文件：3.34757 Mbytes Page：7 Pages	KERSEMI	KERSEMI
IRFR9310TRRPBFA	Power MOSFET 文件：267.35 Kbytes Page：13 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
9310	50 Ohm, RG58, 20 AWG Product Description RG-58/U type, 20 AWG solid .033 bare copper conductor, polyethylene insulation, Duobond® II + tinned copper braid shield (55% coverage), PVC jacket.	BELDEN 百通	BELDEN
9310	Snap Rivets 文件：152.09 Kbytes Page：2 Pages	Heyco	Heyco
9310	MACHINE SCREW PAN PHILLIPS 10-32 文件：130.87 Kbytes Page：1 Pages	KEYSTONE Keystone Electronics Corp.	KEYSTONE
9310F	Snap Rivets 文件：152.09 Kbytes Page：2 Pages	Heyco	Heyco
AEDS-9310	Infra-Red Wavelength 文件：112.83 Kbytes Page：6 Pages	AVAGO 安华高	AVAGO

IRFR9310产品属性

类型
描述
型号
IRFR9310
功能描述
MOSFET P-Chan 400V 1.8 Amp
RoHS
否
制造商
STMicroelectronics
晶体管极性
N-Channel
汲极/源极击穿电压
650 V
闸/源击穿电压
25 V
漏极连续电流
130 A 电阻汲极/源极
RDS（导通）
0.014 Ohms
配置
Single
安装风格
Through Hole
封装/箱体
Max247
封装
Tube

IRFR9310供应商更多...

更新时间：2025-12-31 11:10:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	IRFR9310TRPBF	VISHAY/威世	25+	TO252	20300	VISHAY/威世原装特价IRFR9310TRPBF即刻询购立享优惠#长期有货	询价
深圳市华来深电子有限公司	IRFR9310	IR	23+	TO-252	11846	一级代理商现货批发,原装正品,假一罚十	询价
深圳市勤思达科技有限公司	IRFR9310	IR	12+	TO-252(DPAK)	15000	全新原装,绝对正品,公司现货供应。	询价
深圳市威尔健半导体有限公司	IRFR9310	IR	23+	TO-252	50000	全新原装正品现货,支持订货	询价
深圳市一线半导体有限公司	IRFR9310	IR	24+	TO-252	408		询价
深圳市赛美科科技有限公司	IRFR9310	IR		TO-252	68500	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市恒达亿科技有限公司	IRFR9310	IR	25+	TO-252	4500	全新原装、诚信经营、公司现货销售	询价
深圳瞄钧科技有限公司	IRFR9310TRPBF	IR	24+	TO-252	45000	IR代理原包原盒,假一罚十。最低价	询价
深圳市高捷芯城科技有限公司	IRFR9310TRLPBF-BE3	VISHAY(威世)	24+	TO-252	9908	支持大陆交货,美金交易。原装现货库存。	询价
深圳市得捷芯城科技有限公司	IRFR9310TRPBF	Vishay(威世)	24+	TO-252	14548	原厂可订货,技术支持,直接渠道。可签保供合同	询价

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IRFR9310价格

IRFR9310产品属性

IRFR9310供应商更多...

IRFR9310芯片相关品牌

IRFR9310规格书下载地址

IRFR9310参数引脚图相关

IRFR9310数据表相关新闻

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IRFR9014TRPBF产品种类:MOSFET

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IRFR9024NTRPBF公司原装正品现货

IRFR5410TRPBF原装现货

IRFS38N20D进口原装现货

DdatasheetPDF页码索引