IRFR9310TR价格

参考价格:¥3.7354

型号:IRFR9310TRLPBF 品牌:VISHAY 备注:这里有IRFR9310TR多少钱,2026年最近7天走势,今日出价,今日竞价,IRFR9310TR批发/采购报价,IRFR9310TR行情走势销售排行榜,IRFR9310TR报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFR9310TR

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extre

VishayVishay Siliconix

威世威世科技公司

IRFR9310TR

Power MOSFET

文件:3.34757 Mbytes Page:7 Pages

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre

KERSEMI

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extre

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre

KERSEMI

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extre

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre

KERSEMI

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extre

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre

KERSEMI

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extre

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre

KERSEMI

Power MOSFET

文件:3.34757 Mbytes Page:7 Pages

KERSEMI

Power MOSFET

文件:3.34605 Mbytes Page:7 Pages

KERSEMI

Power MOSFET

文件:3.34605 Mbytes Page:7 Pages

LUCKY-LIGHT

Power MOSFET

文件:3.34757 Mbytes Page:7 Pages

KERSEMI

Power MOSFET

文件:267.35 Kbytes Page:13 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:267.35 Kbytes Page:13 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:3.34757 Mbytes Page:7 Pages

KERSEMI

Power MOSFET

文件:267.35 Kbytes Page:13 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:3.34757 Mbytes Page:7 Pages

KERSEMI

Power MOSFET

文件:3.34757 Mbytes Page:7 Pages

KERSEMI

Power MOSFET

文件:267.35 Kbytes Page:13 Pages

VishayVishay Siliconix

威世威世科技公司

50 Ohm, RG58, 20 AWG

Product Description RG-58/U type, 20 AWG solid .033 bare copper conductor, polyethylene insulation, Duobond® II + tinned copper braid shield (55% coverage), PVC jacket.

BELDEN

百通

Snap Rivets

文件:152.09 Kbytes Page:2 Pages

Heyco

MACHINE SCREW PAN PHILLIPS 10-32

文件:130.87 Kbytes Page:1 Pages

KEYSTONE

Keystone Electronics Corp.

Snap Rivets

文件:152.09 Kbytes Page:2 Pages

Heyco

Infra-Red Wavelength

文件:112.83 Kbytes Page:6 Pages

AVAGO

安华高

IRFR9310TR产品属性

  • 类型

    描述

  • 型号

    IRFR9310TR

  • 功能描述

    MOSFET P-Chan 400V 1.8 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-1-1 17:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Vishay(威世)
24+
TO-252
14548
原厂可订货,技术支持,直接渠道。可签保供合同
VISHAY
25+23+
TO252
72248
绝对原装正品现货,全新深圳原装进口现货
IR
22+
TO-252
8000
原装正品支持实单
IR
25+
TO-252
4500
全新原装、诚信经营、公司现货销售
IR
24+
TO-252
36800
VISHAY(威世)
24+
TO-252
9908
支持大陆交货,美金交易。原装现货库存。
VISHAY/威世
24+
TO-252
39197
郑重承诺只做原装进口现货
IR
17+
TO-252
6200
100%原装正品现货
INFINEON/英飞凌
23+
TO-252
20000
IR
24+
SOT-252
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增

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