Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extre

Power MOSFET

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Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre

Power MOSFET

文件：267.35 Kbytes Page：13 Pages

50 Ohm, RG58, 20 AWG

Product Description RG-58/U type, 20 AWG solid .033 bare copper conductor, polyethylene insulation, Duobond® II + tinned copper braid shield (55% coverage), PVC jacket.

Snap Rivets

文件：152.09 Kbytes Page：2 Pages

MACHINE SCREW PAN PHILLIPS 10-32

文件：130.87 Kbytes Page：1 Pages

Snap Rivets

文件：152.09 Kbytes Page：2 Pages

Infra-Red Wavelength

文件：112.83 Kbytes Page：6 Pages