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位置：首页 > IC中文资料第1449页 > IRFR9214

IRFR9214价格

参考价格：￥2.5297

型号：IRFR9214PBF 品牌：Vishay 备注：这里有IRFR9214多少钱，2025年最近7天走势，今日出价，今日竞价，IRFR9214批发/采购报价，IRFR9214行情走势销售排行榜，IRFR9214报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFR9214

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext

VishayVishay Siliconix

威世威世科技公司

IRFR9214

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext

KERSEMI

IRFR9214

Power MOSFET

FEATURES • Advanced process technology • Fully avalanche rated • Surface-mount (IRFR9214, SiHFR9214) • Straight lead (IRFU9214, SiHFU9214) • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generat

VishayVishay Siliconix

威世威世科技公司

IRFR9214

Power MOSFET

VishayVishay Siliconix

威世威世科技公司

IRFR9214

HEXFET Power MOSFET. VDSS = -250V, RDS(on) = 3.0 Ω, ID = -2.7A

Infineon

英飞凌

IRFR9214

Power MOSFET(Vdss=-250V, Rds(on)=3.0ohm, Id=-2.7A)

文件：107.13 Kbytes Page：10 Pages

IRF

IRFR9214_V01

Power MOSFET

FEATURES • Advanced process technology • Fully avalanche rated • Surface-mount (IRFR9214, SiHFR9214) • Straight lead (IRFU9214, SiHFU9214) • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generat

VishayVishay Siliconix

威世威世科技公司

IRFR9214PBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext

VishayVishay Siliconix

威世威世科技公司

IRFR9214PBF

HEXFET POWER MOSFET ( VDSS = -250V , RDS(on) = 3.0廓 , ID = -2.7A )

Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the de

IRF

IRFR9214PBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext

KERSEMI

IRFR9214TR

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext

VishayVishay Siliconix

威世威世科技公司

IRFR9214TRA

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext

KERSEMI

IRFR9214TRL

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext

VishayVishay Siliconix

威世威世科技公司

IRFR9214TRLA

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext

KERSEMI

IRFR9214TRLPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext

VishayVishay Siliconix

威世威世科技公司

IRFR9214TRLPBFA

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext

KERSEMI

IRFR9214TRPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext

VishayVishay Siliconix

威世威世科技公司

IRFR9214TRPBFA

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext

KERSEMI

IRFR9214PBF

Power MOSFET

文件：3.3941 Mbytes Page：7 Pages

KERSEMI

IRFR9214PBF_15

Power MOSFET

文件：3.3941 Mbytes Page：7 Pages

LUCKY-LIGHT

AD9214

10-Bit, 65/80/105 MSPS 3 V A/D Converter

PRODUCT DESCRIPTION The AD9214 is a 10-bit monolithic sampling analog-to-digital converter (ADC) with an on-chip track-and-hold circuit, and is optimized for low cost, low power, small size, and ease of use. The product operates up to 105 MSPS conversion rate with outstanding dynamic performance

AD

亚德诺

9214

Customer Specification

文件：107.42 Kbytes Page：4 Pages

ALPHAWIRE

ACT9214

LVDS OSCILLATOR

文件：276.76 Kbytes Page：3 Pages

ACT

AD9214

3V A/D Converter

文件：479.76 Kbytes Page：21 Pages

AD

亚德诺

AP9214L

SINGLE CHIP SOLUTION FOR 1-CELL Li BATTERY PACK

文件：689.89 Kbytes Page：17 Pages

DIODES

美台半导体

IRFR9214产品属性

  • 类型

    描述

  • 型号

    IRFR9214

  • 功能描述

    MOSFET P-Chan 250V 2.7 Amp

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS（导通）

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

IRFR9214供应商更多...

更新时间：2025-12-30 19:43:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
中天科工半导体（深圳）有限公司
IRFR9214PBF
IR
20+
DPAK
36900
原装优势主营型号-可开原型号增税票
询价
深圳市粤骏腾电子科技有限公司
IRFR9214TRPBF
SILICONIXVISHAY
24+
NA
13730
原装现货,专业配单专家
询价
深圳市明嘉莱科技有限公司
IRFR9214
IR
24+
TO 252
161426
明嘉莱只做原装正品现货
询价
深圳市联世界科技有限公司
IRFR9214TRPBF
VISHAY
24+/25+
D-PAK(TO-252)
4000
原装正品现货库存价优
询价
深圳市宏世佳电子科技有限公司
IRFR9214
IR
2025+
TO-252
4835
全新原厂原装产品、公司现货销售
询价
深圳市美思瑞电子科技有限公司
IRFR9214TRPBF
VISHAY/威世
22+
N/A
12245
现货,原厂原装假一罚十!
询价
深圳市凌旭科技有限公司
IRFR9214TRPBF
SILICONIXVISHAY
21+
NA
11730
只做原装,一定有货,不止网上数量,量多可订货!
询价
深圳市诺美思科技有限公司
IRFR9214PBF
VISHAY
原厂封装
9800
原装进口公司现货假一赔百
询价
深圳市昌和盛利电子有限公司
IRFR9214
IR
NEW
TO-252
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
询价
深圳市星宇佳科技有限公司
IRFR9214TRPBFMOS(场效应管)
77
252
IR
7
92
询价

IRFR9214芯片相关品牌

IRFR9214规格书下载地址

IRFR9214参数引脚图相关

IRFR9214数据表相关新闻

DdatasheetPDF页码索引

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