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IRFR9214价格
参考价格：￥2.5297
型号：IRFR9214PBF 品牌：Vishay 备注：这里有IRFR9214多少钱，2025年最近7天走势，今日出价，今日竞价，IRFR9214批发/采购报价，IRFR9214行情走势销售排行榜，IRFR9214报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR9214 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | VishayVishay Siliconix 威世威世科技公司 |   | |
IRFR9214 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | KERSEMI | | |
IRFR9214 | Power MOSFET FEATURES • Advanced process technology • Fully avalanche rated • Surface-mount (IRFR9214, SiHFR9214) • Straight lead (IRFU9214, SiHFU9214) • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generat | VishayVishay Siliconix 威世威世科技公司 | | |
IRFR9214 | Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | |
IRFR9214 | HEXFET Power MOSFET. VDSS = -250V, RDS(on) = 3.0 Ω, ID = -2.7A | Infineon 英飞凌 | | |
IRFR9214 | Power MOSFET(Vdss=-250V, Rds(on)=3.0ohm, Id=-2.7A) 文件：107.13 Kbytes Page：10 Pages | IRF | | |
Power MOSFET FEATURES • Advanced process technology • Fully avalanche rated • Surface-mount (IRFR9214, SiHFR9214) • Straight lead (IRFU9214, SiHFU9214) • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generat | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | VishayVishay Siliconix 威世威世科技公司 | | ||
HEXFET POWER MOSFET ( VDSS = -250V , RDS(on) = 3.0廓 , ID = -2.7A ) Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the de | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | KERSEMI | | ||
Power MOSFET 文件：3.3941 Mbytes Page：7 Pages | KERSEMI | | ||
Power MOSFET 文件：3.3941 Mbytes Page：7 Pages | LUCKY-LIGHT | | ||
10-Bit, 65/80/105 MSPS 3 V A/D Converter PRODUCT DESCRIPTION The AD9214 is a 10-bit monolithic sampling analog-to-digital converter (ADC) with an on-chip track-and-hold circuit, and is optimized for low cost, low power, small size, and ease of use. The product operates up to 105 MSPS conversion rate with outstanding dynamic performance | AD 亚德诺 | | ||
Customer Specification 文件：107.42 Kbytes Page：4 Pages | ALPHAWIRE | | ||
LVDS OSCILLATOR 文件：276.76 Kbytes Page：3 Pages | ACT | | ||
3V A/D Converter 文件：479.76 Kbytes Page：21 Pages | AD 亚德诺 | | ||
SINGLE CHIP SOLUTION FOR 1-CELL Li BATTERY PACK 文件：689.89 Kbytes Page：17 Pages | DIODES 美台半导体 | |
IRFR9214产品属性
- 类型
描述
- 型号
IRFR9214
- 功能描述
MOSFET P-Chan 250V 2.7 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay Siliconix |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
|||
IR |
18+ |
TO-252 |
85600 |
保证进口原装可开17%增值税发票 |
|||
VISHAY |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
IR |
2025+ |
TO-252 |
4835 |
全新原厂原装产品、公司现货销售 |
|||
IR |
24+ |
TO-252 |
36800 |
||||
VISHAY/威世 |
21+ |
NA |
12820 |
只做原装,质量保证 |
|||
VISHAY |
1923+ |
TO-252 |
6896 |
原装进口现货库存专业工厂研究所配单供货 |
|||
VISHAY/威世 |
25+ |
TO-252 |
30000 |
全新原装现货,价格优势 |
|||
VISHAY |
24+/25+ |
D-PAK(TO-252) |
4000 |
原装正品现货库存价优 |
|||
SILICONIXVISHAY |
21+ |
NA |
11730 |
只做原装,一定有货,不止网上数量,量多可订货! |
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IRFR9214规格书下载地址
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瀚佳科技(深圳）有限公司： 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30
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