位置：首页 > IC中文资料第1449页 > IRFR9214
IRFR9214价格
参考价格：￥2.5297
型号：IRFR9214PBF 品牌：Vishay 备注：这里有IRFR9214多少钱，2026年最近7天走势，今日出价，今日竞价，IRFR9214批发/采购报价，IRFR9214行情走势销售排行榜，IRFR9214报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR9214 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | VISHAYVishay Siliconix 威世威世科技公司 |   | |
IRFR9214 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | KERSEMI | | |
IRFR9214 | Power MOSFET FEATURES • Advanced process technology • Fully avalanche rated • Surface-mount (IRFR9214, SiHFR9214) • Straight lead (IRFU9214, SiHFU9214) • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generat | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRFR9214 | Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRFR9214 | HEXFET Power MOSFET. VDSS = -250V, RDS(on) = 3.0 Ω, ID = -2.7A | INFINEON 英飞凌 | | |
IRFR9214 | Power MOSFET(Vdss=-250V, Rds(on)=3.0ohm, Id=-2.7A) 文件：107.13 Kbytes Page：10 Pages | IRF | | |
Power MOSFET FEATURES • Advanced process technology • Fully avalanche rated • Surface-mount (IRFR9214, SiHFR9214) • Straight lead (IRFU9214, SiHFU9214) • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generat | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | KERSEMI | | ||
HEXFET POWER MOSFET ( VDSS = -250V , RDS(on) = 3.0廓 , ID = -2.7A ) Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the de | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | KERSEMI | | ||
Power MOSFET 文件：3.3941 Mbytes Page：7 Pages | KERSEMI | | ||
Power MOSFET 文件：3.3941 Mbytes Page：7 Pages | LUCKY-LIGHT | | ||
Low-Cost Ringing SLIC Introduction The Agere Systems Inc. L9214 is a subscriber line interface circuit that is optimized to provide a very low-cost solution for short- and medium-loop applications. This device provides the complete set of line interface functionality, including power ringing needed to interface to a s | AGERE | | ||
Low-Cost Ringing SLIC Introduction The Agere Systems Inc. L9214 is a subscriber line interface circuit that is optimized to provide a very low-cost solution for short- and medium-loop applications. This device provides the complete set of line interface functionality, including power ringing needed to interface to a s | AGERE | | ||
Silicon NPN epitaxial planer transistor For digital circuits ■ Features ● Costs can be reduced through downsizing of the equipment and reduction of the number of parts. ● SS-Mini type package, allowing automatic insertion through tape packing and magazine packing. | PANASONIC 松下 | | ||
HIGH VOLTAGE ANALOG SWITCH 文件：308.95 Kbytes Page：9 Pages | TOSHIBA 东芝 | | ||
HIGH VOLTAGE ANALOG SWITCH 文件：308.95 Kbytes Page：9 Pages | TOSHIBA 东芝 | |
IRFR9214产品属性
- 类型
描述
- 型号
IRFR9214
- 功能描述
MOSFET P-Chan 250V 2.7 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
20+ |
DPAK |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
IR |
24+ |
TO 252 |
161426 |
明嘉莱只做原装正品现货 |
|||
SILICONIXVISHAY |
21+ |
NA |
11730 |
只做原装,一定有货,不止网上数量,量多可订货! |
|||
IR |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
VISHAY/威世 |
25+ |
TO-252 |
30000 |
全新原装现货,价格优势 |
|||
IR |
18+ |
TO-252 |
85600 |
保证进口原装可开17%增值税发票 |
|||
77 |
252 |
IR |
7 |
92 |
|||
Vishay Siliconix |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
|||
Vishay(威世) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
IR |
2450+ |
TO-252 |
9850 |
只做原装正品现货或订货假一赔十! |
IRFR9214规格书下载地址
IRFR9214参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRFU014
- IRFU012
- IRFU010
- IRFS840
- IRFS830
- IRFS750
- IRFS740
- IRFS730
- IRFS720
- IRFS654
- IRFS641
- IRFS640
- IRFS634
- IRFS630
- IRFS540
- IRFS530
- IRFS510
- IRFS450
- IRFS250
- IRFS23N15DTRLP
- IRFS1Z3
- IRFS11N50APBF
- IRFRC20TRPBF-CUTTAPE
- IRFRC20TRPBF
- IRFRC20TRLPBF
- IRFRC20PBF
- IRFRC20
- IRFR9N20DTRPBF
- IRFR9N20DTRLPBF
- IRFR9N20DPBF
- IRFR9N20D
- IRFR9310TRPBF
- IRFR9310TRLPBF
- IRFR9310PBF
- IRFR9220TRPBF
- IRFR9220TRLPBF
- IRFR9220PBF
- IRFR9214TRPBF
- IRFR9214PBF
- IRFR9210TRPBF
- IRFR9210PBF
- IRFR9120TRPBF
- IRFR9120TRLPBF
- IRFR9120PBF
- IRFR9120NTRPBF
- IRFR9120NTRLPBF
- IRFR9120NPBF
- IRFR9110TRPBF
- IRFR9110PBF
- IRFR9024TRPBF-CUTTAPE
- IRFR9024TRPBF
- IRFR9024TRLPBF
- IRFR9024PBF
- IRFR9024NTRRPBF
- IRFR9024NTRPBF-CUTTAPE
- IRFR9024NTRPBF
- IRFR9024NTRLPBF
- IRFR9024NPBF
- IRFR9020TRPBF
- IRFR825
- IRFR812
- IRFR48Z
- IRFR420
- IRFR410
- IRFR330
- IRFR325
- IRFR320
- IRFR310
- IRFR230
- IRFR224
- IRFR220
- IRFR214
- IRFR210
- IRFR120
- IRFR110
- IRFR024
- IRFR020
- IRFR014
- IRFR012
IRFR9214数据表相关新闻
IRFS3607TRLPBF 诺美思科技提供原装正品现货优势供应
IRFS3607TRLPBF 诺美思科技提供原装正品现货优势供应
2021-12-6IRFR9014TRPBF产品种类:MOSFET
IRFR9014TRPBF
2021-9-17IRFS4010PBF 贸泽微军用品质，名用价格
IRFS4010PBF 贸泽微军用品质，名用价格
2020-10-30IRFR9024NTRPBF公司原装正品现货
IRFR9024NTRPBF公司原装正品现货
2019-8-8IRFR5410TRPBF原装现货
IRFR5410TRPBF正品支持验货
2019-7-26IRFS38N20D进口原装现货
瀚佳科技(深圳）有限公司： 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108
