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IRFR9214TR价格
参考价格：￥3.7354
型号：IRFR9214TRPBF 品牌：Vishay 备注：这里有IRFR9214TR多少钱，2026年最近7天走势，今日出价，今日竞价，IRFR9214TR批发/采购报价，IRFR9214TR行情走势销售排行榜，IRFR9214TR报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR9214TR | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | VISHAYVishay Siliconix 威世威世科技公司 |   | |
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext | KERSEMI | | ||
Low-Cost Ringing SLIC Introduction The Agere Systems Inc. L9214 is a subscriber line interface circuit that is optimized to provide a very low-cost solution for short- and medium-loop applications. This device provides the complete set of line interface functionality, including power ringing needed to interface to a s | AGERE | | ||
Low-Cost Ringing SLIC Introduction The Agere Systems Inc. L9214 is a subscriber line interface circuit that is optimized to provide a very low-cost solution for short- and medium-loop applications. This device provides the complete set of line interface functionality, including power ringing needed to interface to a s | AGERE | | ||
Silicon NPN epitaxial planer transistor For digital circuits ■ Features ● Costs can be reduced through downsizing of the equipment and reduction of the number of parts. ● SS-Mini type package, allowing automatic insertion through tape packing and magazine packing. | PANASONIC 松下 | | ||
HIGH VOLTAGE ANALOG SWITCH 文件：308.95 Kbytes Page：9 Pages | TOSHIBA 东芝 | | ||
HIGH VOLTAGE ANALOG SWITCH 文件：308.95 Kbytes Page：9 Pages | TOSHIBA 东芝 | |
IRFR9214TR产品属性
- 类型
描述
- 型号
IRFR9214TR
- 功能描述
MOSFET P-Chan 250V 2.7 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
14+ |
TO-252 |
1107 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SILICONIXVISHAY |
21+ |
NA |
11730 |
只做原装,一定有货,不止网上数量,量多可订货! |
|||
IR |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
VISHAY/威世 |
25+ |
TO-252 |
30000 |
全新原装现货,价格优势 |
|||
IR |
18+ |
TO-252 |
85600 |
保证进口原装可开17%增值税发票 |
|||
77 |
252 |
IR |
7 |
92 |
|||
Vishay Siliconix |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
|||
Vishay(威世) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
IR |
25+ |
TO-252 |
90000 |
一级代理商进口原装现货、价格合理 |
|||
IR |
2450+ |
TO-252 |
9850 |
只做原装正品现货或订货假一赔十! |
IRFR9214TR规格书下载地址
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瀚佳科技(深圳）有限公司： 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30
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