HEXFET POWER MOSFET ( VDSS = -250V , RDS(on) = 3.0廓 , ID = -2.7A )

Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the de

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext

Power MOSFET

文件：3.3941 Mbytes Page：7 Pages

Power MOSFET

文件：3.3941 Mbytes Page：7 Pages

10-Bit, 65/80/105 MSPS 3 V A/D Converter

PRODUCT DESCRIPTION The AD9214 is a 10-bit monolithic sampling analog-to-digital converter (ADC) with an on-chip track-and-hold circuit, and is optimized for low cost, low power, small size, and ease of use. The product operates up to 105 MSPS conversion rate with outstanding dynamic performance

Customer Specification

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LVDS OSCILLATOR

文件：276.76 Kbytes Page：3 Pages

3V A/D Converter

文件：479.76 Kbytes Page：21 Pages

SINGLE CHIP SOLUTION FOR 1-CELL Li BATTERY PACK

文件：689.89 Kbytes Page：17 Pages