IRFR9024N价格

参考价格:¥1.6098

型号:IRFR9024NPBF 品牌:INTERNATIONAL 备注:这里有IRFR9024N多少钱,2025年最近7天走势,今日出价,今日竞价,IRFR9024N批发/采购报价,IRFR9024N行情走势销售排行榜,IRFR9024N报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRFR9024N

Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-11A)

文件:117.92 Kbytes Page:10 Pages

IRF

IRFR9024N

Ultra Low On-Resistance

文件:886.4 Kbytes Page:10 Pages

KERSEMI

IRFR9024N

isc P-Channel MOSFET Transistor

文件:309 Kbytes Page:2 Pages

ISC

无锡固电

IRFR9024N

P-Channel MOSFET

文件:228.83 Kbytes Page:7 Pages

KEXIN

科信电子

HEXFET POWER MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

KERSEMI

ULTRA LOW ON-RESISTANCE

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

KERSEMI

ULTRA LOW ON-ORSISTANCE

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

KERSEMI

ULTRA LOW ON-RESISTANCE

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

KERSEMI

HEXFET POWER MOSFET ( VDSS = -55V , RDS(on) = 0.175廓 , ID = -11A )

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

-60V P -Channel Enhancement Mode MOSFET

General Features Vps =-60V Ip=-20A Robson)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

60V P-Channel Enhancement Mode MOSFET

General Features Vos = -60V Ip =-20 A Ros(on)

EVVOSEMI

翊欧

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

Ultra Low On-Resistance

文件:1.38963 Mbytes Page:11 Pages

IRF

ULTRA LOW ON RESISTANCE

文件:1.38963 Mbytes Page:11 Pages

IRF

ULTRA LOW ON RESISTANCE

文件:1.38963 Mbytes Page:11 Pages

IRF

P-Channel 60-V (D-S) MOSFET

文件:1.02804 Mbytes Page:8 Pages

VBSEMI

微碧半导体

Military Managed 24-Port 1G Ethernet Router/Switch

FEATURES DESCRIPTION Ethernet is becoming the standard for IP-based components in military and commercial applications on land, sea and air platforms. The MILTECH9024 is specifically designed for battlefield C4ISR, voice, video, sensor data acquisition and communications in platforms that ha

ENERCON

INSULATED PC SPACERS/SUPPORTS

INSULATED PC SPACERS / SUPPORTS • Board will be electrically insulated, eliminates need for insulating washers • Easy snap-in assembly • No tool required for installation • Designed for .062(1.57) thick boards • One piece design eliminates the need for additional screws and nuts • Slim desig

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

Snap Rivets

文件:152.09 Kbytes Page:2 Pages

HeycoHeyco.

海科

Snap Rivets

文件:152.09 Kbytes Page:2 Pages

HeycoHeyco.

海科

Cooper-Wheelock AS/AH Serles

文件:240.06 Kbytes Page:4 Pages

GAMEWELL-FCI

霍尼韦尔

IRFR9024N产品属性

  • 类型

    描述

  • 型号

    IRFR9024N

  • 功能描述

    MOSFET MOSFET, P-CHANNEL, -55V, 11A, 175 mOhm, 12.7 nC Qg, D-Pak

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-7 19:45:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
25+
TO-252
20300
INFINEON/英飞凌原装特价IRFR9024NTRPBF即刻询购立享优惠#长期有货
INFINEON
22+
TO-220
6000
原装正品可支持验货,欢迎咨询
INFINEON
21+
SOP
9800
只做原装正品假一赔十!正规渠道订货!
TECH PUBLIC(台舟)
24+
TO-252
5000
诚信服务,绝对原装原盘。
INFINEON
21+
TO-252
24000
全新原装公司现货
INFINEON
23+
TO-252
10000
全新、原装
IR
23+
TO-252
22000
原装现货假一罚十
IR
23+
D-PAK
65400
IR(国际整流器)
24+
5646
只做原装现货假一罚十!价格最低!只卖原装现货
ON
23+
IRFR9024NTRPB
270
只做原装全系列供应价格优势

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