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IRFR9024N价格
参考价格:¥1.6098
型号:IRFR9024NPBF 品牌:INTERNATIONAL 备注:这里有IRFR9024N多少钱,2025年最近7天走势,今日出价,今日竞价,IRFR9024N批发/采购报价,IRFR9024N行情走势销售排行榜,IRFR9024N报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
IRFR9024N | Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-11A) 文件:117.92 Kbytes Page:10 Pages | IRF | ||
IRFR9024N | Ultra Low On-Resistance 文件:886.4 Kbytes Page:10 Pages | KERSEMI | ||
IRFR9024N | isc P-Channel MOSFET Transistor 文件:309 Kbytes Page:2 Pages | ISC 无锡固电 | ||
IRFR9024N | P-Channel MOSFET 文件:228.83 Kbytes Page:7 Pages | KEXIN 科信电子 | ||
HEXFET POWER MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | |||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | KERSEMI | |||
ULTRA LOW ON-RESISTANCE Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | KERSEMI | |||
ULTRA LOW ON-ORSISTANCE Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | KERSEMI | |||
ULTRA LOW ON-RESISTANCE Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | KERSEMI | |||
HEXFET POWER MOSFET ( VDSS = -55V , RDS(on) = 0.175廓 , ID = -11A ) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | |||
Ultra Low On-Resistance Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | |||
-60V P -Channel Enhancement Mode MOSFET General Features Vps =-60V Ip=-20A Robson) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | |||
60V P-Channel Enhancement Mode MOSFET General Features Vos = -60V Ip =-20 A Ros(on) | EVVOSEMI 翊欧 | |||
Ultra Low On-Resistance Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | |||
Ultra Low On-Resistance Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | |||
Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | |||
Ultra Low On-Resistance 文件:1.38963 Mbytes Page:11 Pages | IRF | |||
ULTRA LOW ON RESISTANCE 文件:1.38963 Mbytes Page:11 Pages | IRF | |||
ULTRA LOW ON RESISTANCE 文件:1.38963 Mbytes Page:11 Pages | IRF | |||
P-Channel 60-V (D-S) MOSFET 文件:1.02804 Mbytes Page:8 Pages | VBSEMI 微碧半导体 | |||
Military Managed 24-Port 1G Ethernet Router/Switch FEATURES DESCRIPTION Ethernet is becoming the standard for IP-based components in military and commercial applications on land, sea and air platforms. The MILTECH9024 is specifically designed for battlefield C4ISR, voice, video, sensor data acquisition and communications in platforms that ha | ENERCON | |||
INSULATED PC SPACERS/SUPPORTS INSULATED PC SPACERS / SUPPORTS • Board will be electrically insulated, eliminates need for insulating washers • Easy snap-in assembly • No tool required for installation • Designed for .062(1.57) thick boards • One piece design eliminates the need for additional screws and nuts • Slim desig | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | |||
Snap Rivets 文件:152.09 Kbytes Page:2 Pages | HeycoHeyco. 海科 | |||
Snap Rivets 文件:152.09 Kbytes Page:2 Pages | HeycoHeyco. 海科 | |||
Cooper-Wheelock AS/AH Serles 文件:240.06 Kbytes Page:4 Pages | GAMEWELL-FCI 霍尼韦尔 |
IRFR9024N产品属性
- 类型
描述
- 型号
IRFR9024N
- 功能描述
MOSFET MOSFET, P-CHANNEL, -55V, 11A, 175 mOhm, 12.7 nC Qg, D-Pak
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
25+ |
TO-252 |
20300 |
INFINEON/英飞凌原装特价IRFR9024NTRPBF即刻询购立享优惠#长期有货 |
|||
INFINEON |
22+ |
TO-220 |
6000 |
原装正品可支持验货,欢迎咨询 |
|||
INFINEON |
21+ |
SOP |
9800 |
只做原装正品假一赔十!正规渠道订货! |
|||
TECH PUBLIC(台舟) |
24+ |
TO-252 |
5000 |
诚信服务,绝对原装原盘。 |
|||
INFINEON |
21+ |
TO-252 |
24000 |
全新原装公司现货
|
|||
INFINEON |
23+ |
TO-252 |
10000 |
全新、原装 |
|||
IR |
23+ |
TO-252 |
22000 |
原装现货假一罚十 |
|||
IR |
23+ |
D-PAK |
65400 |
||||
IR(国际整流器) |
24+ |
5646 |
只做原装现货假一罚十!价格最低!只卖原装现货 |
||||
ON |
23+ |
IRFR9024NTRPB |
270 |
只做原装全系列供应价格优势 |
IRFR9024N规格书下载地址
IRFR9024N参数引脚图相关
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瀚佳科技(深圳)有限公司: 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30IRFR5410TRPBF进口原装假一赔十
瀚佳科技: 专业销售集成电路IC.单片.内存闪存.二三级管模块等电子元器件.欢迎询价购买。
2018-12-28
DdatasheetPDF页码索引
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