Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-11A)

文件：117.92 Kbytes Page：10 Pages

Ultra Low On-Resistance

文件：886.4 Kbytes Page：10 Pages

isc P-Channel MOSFET Transistor

文件：309 Kbytes Page：2 Pages

P-Channel MOSFET

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-55V 单个 P 通道 HEXFET Power MOSFET, 采用 D-Pak 封装

HEXFET POWER MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

ULTRA LOW ON-RESISTANCE

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

ULTRA LOW ON-ORSISTANCE

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

ULTRA LOW ON-RESISTANCE

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HEXFET POWER MOSFET ( VDSS = -55V , RDS(on) = 0.175廓 , ID = -11A )

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

-60V P -Channel Enhancement Mode MOSFET

General Features Vps =-60V Ip=-20A Robson)

60V P-Channel Enhancement Mode MOSFET

General Features Vos = -60V Ip =-20 A Ros(on)

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

采用 D-Pak 封装的 -55V 单 P 通道 HEXFET 功率 MOSFET

ULTRA LOW ON RESISTANCE

文件：1.38963 Mbytes Page：11 Pages

Ultra Low On-Resistance

文件：1.38963 Mbytes Page：11 Pages

ULTRA LOW ON RESISTANCE

文件：1.38963 Mbytes Page：11 Pages

P-Channel 60-V (D-S) MOSFET

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场效应管

Military Managed 24-Port 1G Ethernet Router/Switch

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INSULATED PC SPACERS/SUPPORTS

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Snap Rivets

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Snap Rivets

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