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IRFR9014T价格
参考价格：￥2.6559
型号：IRFR9014TRLPBF 品牌：Vishay 备注：这里有IRFR9014T多少钱，2026年最近7天走势，今日出价，今日竞价，IRFR9014T批发/采购报价，IRFR9014T行情走势销售排行榜，IRFR9014T报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世威世科技公司 |   | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
HEXFET Power MOSFET Description Third Generation HESFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9014) • Straight L | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世威世科技公司 | | ||
P-Channel Enhancement Mode MOSFETl Features * Vos =60V =-13A Rosion 100mQ @ Ves=10V Rosion 110m Q @ Vos=-4.5V (TYP) | TECHPUBLIC 台舟电子 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET 文件：1.16375 Mbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.16375 Mbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
P-Channel 60-V (D-S) MOSFET 文件：1.02813 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
Power MOSFET 文件：1.16375 Mbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.16375 Mbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
NPN SILICON TRANSISTOR FEATURES Power dissipation PCM : 0.4 W (Tamb=25°C) Collector current ICM : 0.1 A Collector-base voltage V(BR)CBO : 50 V | WINGS 永盛电子 | | ||
TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors NPN silicon | DAYA 大亚电器 | | ||
NPN Silicon Epitaxial Planar Transistor NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be | DGNJDZ 南晶电子 | | ||
Fairchild QFET for Synchronous Rectification Introduction Fairchild is currently developing and marketing a new QFET series that has improved RDS(on), gate charge, and switching speed characteristics. The superior features of these QFETs are very useful for increasing the efficiency of low output voltage power supplies, making it specially | Fairchild 仙童半导体 | | ||
NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES * High total power dissipation. (450mW) * Excellent hFE linearity. * Complementary to UTC 9015 | UTC 友顺 | |
IRFR9014T产品属性
- 类型
描述
- 型号
IRFR9014T
- 功能描述
MOSFET P-Chan 60V 5.1 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
7250 |
原装现货,当天可交货,原型号开票 |
|||
VISHAY SEMICONDUCTOR |
25+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
|||
IR |
24+ |
TO-252 |
36800 |
||||
VISHAY(威世) |
24+ |
TO-252 |
9908 |
支持大陆交货,美金交易。原装现货库存。 |
|||
ir |
2023+ |
原厂封装 |
50000 |
原装现货 |
|||
VISHAY |
23+ |
TO-252 |
8000 |
只做原装现货 |
|||
VISHAY |
23+ |
TO-252 |
7000 |
||||
VISHAY(威世) |
2447 |
TO-252-3 |
115000 |
3000个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
IR |
22+ |
TO252 |
20000 |
公司只做原装 品质保障 |
|||
VISHAY/威世通 |
20+ |
na |
65790 |
原装优势主营型号-可开原型号增税票 |
IRFR9014T规格书下载地址
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2018-12-28
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