IRFR9014TR价格

参考价格:¥2.6559

型号:IRFR9014TRLPBF 品牌:Vishay 备注:这里有IRFR9014TR多少钱,2025年最近7天走势,今日出价,今日竞价,IRFR9014TR批发/采购报价,IRFR9014TR行情走势销售排行榜,IRFR9014TR报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRFR9014TR

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

VishayVishay Siliconix

威世科技威世科技半导体

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

KERSEMI

HEXFET Power MOSFET

Description Third Generation HESFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9014) • Straight L

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

VishayVishay Siliconix

威世科技威世科技半导体

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

VishayVishay Siliconix

威世科技威世科技半导体

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

VishayVishay Siliconix

威世科技威世科技半导体

P-Channel Enhancement Mode MOSFETl

Features * Vos =60V =-13A Rosion 100mQ @ Ves=10V Rosion 110m Q @ Vos=-4.5V (TYP)

TECHPUBLIC

台舟电子

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

KERSEMI

Power MOSFET

文件:1.16375 Mbytes Page:13 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Power MOSFET

文件:1.16375 Mbytes Page:13 Pages

VishayVishay Siliconix

威世科技威世科技半导体

P-Channel 60-V (D-S) MOSFET

文件:1.02813 Mbytes Page:8 Pages

VBSEMI

微碧半导体

Power MOSFET

文件:1.16375 Mbytes Page:13 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Power MOSFET

文件:1.16375 Mbytes Page:13 Pages

VishayVishay Siliconix

威世科技威世科技半导体

NPN SILICON TRANSISTOR

FEATURES Power dissipation PCM : 0.4 W (Tamb=25°C) Collector current ICM : 0.1 A Collector-base voltage V(BR)CBO : 50 V

WINGS

永盛电子

TO-92 Plastic-Encapsulate Transistors

TO-92 Plastic-Encapsulate Transistors NPN silicon

DAYA

大亚电器集团

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be

DGNJDZ

南晶电子

Fairchild QFET for Synchronous Rectification

Introduction Fairchild is currently developing and marketing a new QFET series that has improved RDS(on), gate charge, and switching speed characteristics. The superior features of these QFETs are very useful for increasing the efficiency of low output voltage power supplies, making it specially

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

NPN EPITAXIAL SILICON TRANSISTOR

PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES * High total power dissipation. (450mW) * Excellent hFE linearity. * Complementary to UTC 9015

UTC

友顺

IRFR9014TR产品属性

  • 类型

    描述

  • 型号

    IRFR9014TR

  • 功能描述

    MOSFET P-Chan 60V 5.1 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-10 19:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO-252
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
IR
23+
D-PAK
19526
IR
24+
TO-252
500993
免费送样原盒原包现货一手渠道联系
VISHAY SEMICONDUCTOR
25+
SMD
918000
明嘉莱只做原装正品现货
Vishay(威世)
24+
TO-252-2(DPAK)
9048
原厂可订货,技术支持,直接渠道。可签保供合同
IR
22+
TO-252
8000
原装正品支持实单
IR
25+
TO-252
4500
全新原装、诚信经营、公司现货销售
VISHAY/威世
21+
TO-252-3
12820
只做原装,质量保证
VISHAY/威世
24+
TO-252
2000
只做原厂渠道 可追溯货源
IR
24+
TO-252
36800

IRFR9014TR数据表相关新闻