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IRFR9014TR价格
参考价格：￥2.6559
型号：IRFR9014TRLPBF 品牌：Vishay 备注：这里有IRFR9014TR多少钱，2026年最近7天走势，今日出价，今日竞价，IRFR9014TR批发/采购报价，IRFR9014TR行情走势销售排行榜，IRFR9014TR报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR9014TR | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VISHAYVishay Siliconix 威世威世科技公司 |   | |
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
HEXFET Power MOSFET Description Third Generation HESFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9014) • Straight L | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
P-Channel Enhancement Mode MOSFETl Features * Vos =60V =-13A Rosion 100mQ @ Ves=10V Rosion 110m Q @ Vos=-4.5V (TYP) | TECHPUBLIC 台舟电子 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET 文件：1.16375 Mbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.16375 Mbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
P-Channel 60-V (D-S) MOSFET 文件：1.02813 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
Power MOSFET 文件：1.16375 Mbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.16375 Mbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
NPN SILICON TRANSISTOR FEATURES Power dissipation PCM : 0.4 W (Tamb=25°C) Collector current ICM : 0.1 A Collector-base voltage V(BR)CBO : 50 V | WINGS 永盛电子 | | ||
NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications????????? NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications | SEMTECH 先之科 | | ||
Pre-Amplifier, Low Level & Low Noise Pre-Amplifier, Low Level & Low Noise • High total power dissipation. (PT = 450mW) • High hFE and good linearity • Complementary to SS9015 | FAIRCHILD 仙童半导体 | | ||
Advanced Power MOSFET FEATURES ❐ Avalanche Rugged Technology ❐ Rugged Gate Oxide Technology ❐ Lower Input Capacitance ❐ Improved Gate Charge ❐ Extended Safe Operating Area ❐ Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ❐ Lower RDS(ON) : 0.362 Ω (Typ.) | FAIRCHILD 仙童半导体 | | ||
Pre-Amplifier, Low Level & Low Noise Pre-Amplifier, Low Level & Low Noise • High total power dissipation. (PT = 450mW) • High hFE and good linearity • Complementary to SS9015 | FAIRCHILD 仙童半导体 | |
IRFR9014TR产品属性
- 类型
描述
- 型号
IRFR9014TR
- 功能描述
MOSFET P-Chan 60V 5.1 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
23+ |
TO-252 |
10820 |
全新原装正品现货可开票 |
|||
VISHAY |
25+ |
TO-252 |
24000 |
只做原装 有挂有货 假一赔十 |
|||
VISHAY/威世 |
23+ |
ThroughHole |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
INR |
23+ |
TO-3 |
44353 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
VISHAY SEMICONDUCTOR |
25+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
|||
IR |
24+ |
SOT-223 |
59 |
||||
IR |
22+ |
263 |
6000 |
终端可免费供样,支持BOM配单 |
|||
VISHAY/威世 |
25+ |
TO-252 |
18684 |
全新原装现货特价销售,欢迎来电查询 |
|||
IR |
23+ |
65480 |
|||||
IR |
05+ |
原厂原装 |
4291 |
只做全新原装真实现货供应 |
IRFR9014TR规格书下载地址
IRFR9014TR参数引脚图相关
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瀚佳科技： 专业销售集成电路IC.单片.内存闪存.二三级管模块等电子元器件.欢迎询价购买。
2018-12-28
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