丝印代码：IRFR5505；-60V P -Channel Enhancement Mode MOSFET

General Features VDS = -60V ID =-10 A RDS(ON)

丝印代码：IRFR5505；-60V P -Channel Enhancement Mode MOSFET

Description The uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -60V ID =-10 A RDS(ON)

-60V P -Channel Enhancement Mode MOSFET

Description The uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -60V ID =-10 A RDS(ON)

采用 D-Pak 封装的 -55V 单 P 通道 IR MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度\n• P 通道MOSFET;

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -18A@ TC=25℃ · Drain Source Voltage -VDSS= -55V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.11Ω(Max)@VGS= -10V DESCRIPTION · Load Switch · DC-DC Converter · Motor Drive

Power MOSFET(Vdss=-55V, Rds(on)=0.11ohm, Id=-18A)

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Ultra Low On-Resistance

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Ultra Low On-Resistance

VDSS = -55V RDS(on) = 0.11Ω ID = -18A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design th

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

ultra low on-resistance

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ULTRA LOW ON RESISTANCE

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ULTRA LOW ON-RESISTANCE

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ULTRA LOW ON RESISTANCE

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ULTRA LOW ON-RESISTANCE

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MOSFET P-CH 55V 18A DPAK

P-Channel 60 V (D-S) MOSFET

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Advanced process Technolgy

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MOSFET P-CH 55V 18A DPAK

DC/DC Converter Applications

Features • Composite type with two PNP transistors contained in a single package facilitating high-density mounting. • The CPH5505 consists of two chips which are equivalent to the CPH3109 encapsulated in a package. • Ultrasmall package facilitates miniaturization in end products (mounting heig

CMOS-CCD 1H Delay Line for PAL

Description The CXL5505M/P are CMOS-CCD delay line ICs that provide 1H delay time for PAL signals including the external low-pass filter. Features • Single 5V power supply • Low power consumption 100mW (Typ.) • Built-in peripheral circuits • Built-in quadruple PLL circuit Functions • 1130-

CMOS-CCD 1H Delay Line for PAL

Description The CXL5505M/P are CMOS-CCD delay line ICs that provide 1H delay time for PAL signals including the external low-pass filter. Features • Single 5V power supply • Low power consumption 100mW (Typ.) • Built-in peripheral circuits • Built-in quadruple PLL circuit Functions • 1130-

PHOTOMULTlPLlER TUBE

Stable Operation in High Magnetic Fields beyond 1 Tesla 25 mm (1 Inch) Diameter, Proximity Photocathode and Fine Mesh Dynodes

Power MOSFET(Vdss=-55V, Rds(on)=0.11ohm, Id=-18A)

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