Power MOSFET(Vdss=-55V, Rds(on)=0.11ohm, Id=-18A)

文件：108.01 Kbytes Page：10 Pages

Ultra Low On-Resistance

VDSS = -55V RDS(on) = 0.11Ω ID = -18A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design th

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

ULTRA LOW ON-RESISTANCE

文件：3.91037 Mbytes Page：10 Pages

P-Channel 60-V (D-S) MOSFET

文件：974.87 Kbytes Page：7 Pages

High Current RF Chokes

Special Features • Very high current capacity • Low DCR • Ferrite core • VW-1 rated shrink tubing to cover winding • Fixed lead spacing • Operating temperature -55 to +105°C • Current to cause 5 maximum inductance drop or 35°C maximum temperature rise

450 MHz to 6000 MHz TruPwr Detector

FEATURES True rms response detector Excellent temperature stability ±0.25 dB rms detection accuracy vs. temperature Over 35 dB input power dynamic range, inclusive of crest factor RF bandwidths from 450 MHz to 6000 MHz 500 Ω input impedance Single-supply operation: 2.5 V to 3.3 V Low power

450 MHz to 6000Mhz TruPwr Detector

GENERAL DESCRIPTION The ADL5505 is a TruPwr™ mean-responding (true rms) power detector for use in high frequency receiver and transmitter signal chains from 450 MHz to 6000 MHz. Requiring only a single supply between 2.5 V and 3.3 V, the detector draws less than 1.8 mA. The input is internally ac

J5800-001 INSERTION TOOL PRODUCT SPECIFICATION

文件：23.08 Kbytes Page：1 Pages

High Current Chokes

文件：469.54 Kbytes Page：1 Pages