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IRFR5505PBF中文资料
IRFR5505PBF数据手册规格书PDF详情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
● Ultra Low On-Resistance
● P-Channel
● Surface Mount (IRFR5505)
● Straight Lead (IRFU5505)
● Advanced Process Technology
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
IRFR5505PBF产品属性
- 类型
描述
- 型号
IRFR5505PBF
- 功能描述
MOSFET 1 P-CH -55V HEXFET 110mOhms 21.3nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
IR |
24+ |
TO-252AA-3 |
8866 |
||||
` |
24+ |
BGA |
1068 |
原装现货假一罚十 |
|||
IR |
25+ |
TO252 |
60 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
Infineon |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
IR |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
IR原装 |
25+23+ |
TO-252 |
23380 |
绝对原装正品全新进口深圳现货 |
|||
International Rectifier |
2022+ |
1 |
全新原装 货期两周 |
||||
IR |
25+ |
TO252 |
30000 |
代理全新原装现货,价格优势 |
|||
IR原装 |
24+ |
TO-252 |
30980 |
原装现货/放心购买 |
IRFR5505PBF 价格
参考价格:¥1.0769
IRFR5505PBF 资料下载更多...
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